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ASI10681

Description
RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, PILL, 4 PIN
CategoryThe transistor   
File Size16KB,1 Pages
ManufacturerAdvanced Semiconductor, Inc.
Download Datasheet Parametric View All

ASI10681 Overview

RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, PILL, 4 PIN

ASI10681 Parametric

Parameter NameAttribute value
MakerAdvanced Semiconductor, Inc.
package instructionDISK BUTTON, O-CRDB-F4
Contacts4
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Maximum collector current (IC)1.7 A
Collector-based maximum capacity22 pF
Collector-emitter maximum voltage16 V
ConfigurationSINGLE
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeO-CRDB-F4
Number of components1
Number of terminals4
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationRADIAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
ULBM5SL
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI ULBM5SL
is Designed for
PACKAGE STYLE .280 4L STUD
FEATURES:
Omnigold™
Metalization System
45°
B
A
MAXIMUM RATINGS
E
D
C
J
I
I
C
V
CBO
V
CER
V
CES
V
EBO
P
DISS
T
J
T
STG
θ
JC
O
O
1.7 A
36 V
16 V
36 V
4.0 V
15 W @ T
C
= 25 C
-65 C to +200 C
-65 C to +150 C
12
O
C/W
O
O
O
DIM
A
B
C
D
E
F
G
H
I
J
K
F
G
H
K
MINIMUM
inches / mm
#8-32 UNC
MAXIMUM
inches / mm
1.010 / 25.65
.220 / 5.59
.270 / 6.86
.003 / 0.08
.117 / 2.97
.572 / 14.53
.130 / 3.30
.245 / 6.22
.640 / 16.26
.175 / 4.45
.275 / 6.99
1.055 / 26.80
.230 /5.84
.285 / 7.24
.007 / 0.18
.137 / 3.48
.255 / 6.48
.217 / 5.51
.285 / 7.24
ORDER CODE: ASI10681
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CES
BV
EBO
I
CER
I
CBO
h
FE
C
ob
P
G
η
C
I
C
= 50 mA
I
C
= 10 mA
T
C
= 25 C
O
NONETEST
CONDITIONS
MINIMUM TYPICAL MAXIMUM
16
36
4.0
UNITS
V
V
V
I
E
= 2.0 mA
V
CE
= 10 V
V
CB
= 15 V
V
CE
= 5.0 V
V
CB
= 7.5 V
V
CC
= 7.5 V
P
OUT
= 5.0 W
I
C
= 1.0 A
f = 1.0 MHz
f = 470 MHz
R
BE
= 50
0.5
1.0
10
100
22
8.5
60
mA
mA
---
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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