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MXSMLJ33AE3

Description
Trans Voltage Suppressor Diode, 3000W, 33V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC PACKAGE-2
Categorydiode   
File Size950KB,12 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance  
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MXSMLJ33AE3 Overview

Trans Voltage Suppressor Diode, 3000W, 33V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC PACKAGE-2

MXSMLJ33AE3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicrosemi
Parts packaging codeDO-214AB
package instructionR-PDSO-C2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Maximum breakdown voltage40.6 V
Minimum breakdown voltage36.7 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-214AB
JESD-30 codeR-PDSO-C2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation3000 W
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
polarityUNIDIRECTIONAL
Maximum power dissipation1.61 W
Certification statusNot Qualified
GuidelineMIL-19500
Maximum repetitive peak reverse voltage33 V
surface mountYES
technologyAVALANCHE
Terminal surfaceMatte Tin (Sn)
Terminal formJ BEND
Terminal locationDUAL
Maximum time at peak reflow temperature40
Base Number Matches1
MSMLG5.0A – MSMLG170CAe3, MSMLJ5.0A – MSMLJ170CAe3 Surface
Mount 3000 Watt Transient Voltage Suppressor
1
Product Overview
The MSMLG5.0A–MSMLG170CA and the MSMLJ5.0A–MSMLJ170CA series of high-reliability transient
voltage suppressors (TVS) protect circuits from voltage spikes containing up to 3000 W (10/1000 μs
model pulse). The SMLG gull-wing design in the DO-215AB package allows for visible solder connections.
The SMLJ J-bend design in the DO-214AB package allows for greater PC board mounting density.
Selections include unidirectional and bidirectional as well as RoHS-compliant versions. These are
available with a variety of upscreening options for enhanced reliability. They protect against the
secondary effects of lightning per IEC61000-4-5 and against voltage pulses from inductive switching
environments and induced by RF radiation. Since their response time is virtually instantaneous, they can
also be used in protection from ESD and EFT per IEC61000-4-2 and IEC61000-4-4.
For the latest information, visit our website
www.microsemi.com
.
1.1
Features
The following are key features of the MSMLG5.0A through MSMLG170CAe3 and the MSMLJ5.0A
through MSMLJ170CAe3 devices:
High-reliability devices with fabrication and assembly lot traceability for all M prefix devices
All devices are 100% surge tested
3σ lot norm screening performed on standby current (I
D
) for all M prefix devices
Available in both unidirectional and bidirectional versions
Moisture classification is “Level 1” with no dry pack required per IPC/JEDEC J-STD-020B for all M
prefix devices.
Enhanced reliability screening options with M prefix are available in reference to MIL-PRF-19500.
Refer to
High Reliability Up-Screened Plastic Products Portfolio
for more details on the screening
options (see Part Nomenclature for all available options).
RoHS compliant versions available
Axial-lead equivalent packages for thru-hole mounting are available as M5KP5.0A to M5KP110CA
with 5000 W rating (contact Microsemi for other surface mount options).
Microsemi Proprietary and Confidential. MSMLG5.0A–MSMLG170CAe3, MSMLJ5.0A–MSMLJ170CAe3 Datasheet Revision D
1
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