TSM036N03PQ56 RLG datasheet, PDF

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TSM036N03PQ56 RLG: DescriptionMOSFET Power MOSFET, N-CHAN 30V, 95A, 3.6mOhm; Categorysemiconductor Discrete semiconductor The transistor MOSFET; File Size357KB，7 Pages; ManufacturerTaiwan Semiconductor; Websitehttp://www.taiwansemi.com/; Environmental Compliance

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TSM036N03PQ56 RLG Overview

MOSFET Power MOSFET, N-CHAN 30V, 95A, 3.6mOhm

TSM036N03PQ56 RLG Parametric

Parameter Name	Attribute value
Maker	Taiwan Semiconductor
Product Category	MOSFET
technology	Si
Installation style	SMD/SMT
Package/box	PDFN-56-8
Number of channels	1 Channel
Transistor polarity	N-Channel
Vds - drain-source breakdown voltage	30 V
Id-continuous drain current	124 A
Rds On - drain-source on-resistance	3.6 mOhms
Vgs th-gate-source threshold voltage	1.2 V
Vgs - gate-source voltage	20 V
Qg-gate charge	50 nC
Minimum operating temperature	- 55 C
Maximum operating temperature	+ 150 C
Pd-power dissipation	83 W
Configuration	Single
channel mode	Enhancement
Encapsulation	Cut Tape
Encapsulation	MouseReel
Encapsulation	Reel
series	TSM
Forward transconductance - minimum	44 S
Fall time	10.6 ns
Rise Time	10.4 ns
Factory packaging quantity	2500
Typical shutdown delay time	25.2 ns
Typical switch-on delay time	4.8 ns

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TSM036N03PQ56

Taiwan Semiconductor

N-Channel Power MOSFET

30V, 124A, 3.6mΩ

FEATURES

● Low R

DS(ON)

to minimize conductive losses

● Low gate charge for fast power switching

● 100% UIS and R

tested

● Compliant to RoHS directive 2011/65/EU and in

accordance to WEEE 2002/96/EC

● Halogen-free according to IEC 61249-2-21

KEY PERFORMANCE PARAMETERS

PARAMETER

DS(on)

(max)

= 10V

= 4.5V

VALUE

3.6

mΩ

5.5

UNIT

APPLICATIONS

● DC-DC Converters

● Battery Power Management

● ORing FET/Load Switch

PDFN56

Note:

MSL 1 (Moisture Sensitivity Level) per J-STD-020

ABSOLUTE MAXIMUM RATINGS

= 25°C unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Single Pulse Avalanche Current

(Note 2)

Single Pulse Avalanche Energy

Total Power Dissipation

(Note 2)

(Note 1)

SYMBOL

= 25°C

= 125°C

= 25°C

= 125°C

, T

STG

LIMIT

±20

124

496

109

2.6

0.5

- 55 to +150

UNIT

°C

Operating Junction and Storage Temperature Range

THERMAL PERFORMANCE

PARAMETER

Junction to Case Thermal Resistance

Junction to Ambient Thermal Resistance

SYMBOL

ӨJC

ӨJA

LIMIT

1.5

UNIT

°C/W

Thermal Performance Note:

ӨJA

is the sum of the junction-to-case and case-to-ambient thermal resistances. The case-

thermal reference is defined at the solder mounting surface of the drain pins. R

ӨJA

is guaranteed by design while R

ӨCA

determined by the user’s board design.

Version: B1607

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