MOSFET 1200V 35m? SiC Cascode Fast
Parameter Name | Attribute value |
Maker | UnitedSiC |
Product Category | MOSFET |
technology | SiC |
Installation style | Through Hole |
Package/box | TO-247-4 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - drain-source breakdown voltage | 1200 V |
Id-continuous drain current | 65 A |
Rds On - drain-source on-resistance | 45 mOhms |
Vgs th-gate-source threshold voltage | 4 V |
Vgs - gate-source voltage | 25 V |
Qg-gate charge | 51 nC |
Minimum operating temperature | - 55 C |
Maximum operating temperature | + 175 C |
Pd-power dissipation | 429 W |
Configuration | Single |
channel mode | Enhancement |
Encapsulation | Tube |
series | UF3C |
Transistor type | 1 N-Channel |
Fall time | 10 ns |
Rise Time | 27 ns |
Factory packaging quantity | 30 |
Typical shutdown delay time | 50 ns |
Typical switch-on delay time | 24 ns |