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UF3C120040K4S

Description
MOSFET 1200V 35m? SiC Cascode Fast
Categorysemiconductor    Discrete semiconductor    The transistor    MOSFET   
File Size379KB,9 Pages
ManufacturerUnitedSiC
Environmental Compliance
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MOSFET 1200V 35m? SiC Cascode Fast

UF3C120040K4S Parametric

Parameter NameAttribute value
MakerUnitedSiC
Product CategoryMOSFET
technologySiC
Installation styleThrough Hole
Package/boxTO-247-4
Number of channels1 Channel
Transistor polarityN-Channel
Vds - drain-source breakdown voltage1200 V
Id-continuous drain current65 A
Rds On - drain-source on-resistance45 mOhms
Vgs th-gate-source threshold voltage4 V
Vgs - gate-source voltage25 V
Qg-gate charge51 nC
Minimum operating temperature- 55 C
Maximum operating temperature+ 175 C
Pd-power dissipation429 W
ConfigurationSingle
channel modeEnhancement
EncapsulationTube
seriesUF3C
Transistor type1 N-Channel
Fall time10 ns
Rise Time27 ns
Factory packaging quantity30
Typical shutdown delay time50 ns
Typical switch-on delay time24 ns

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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