SEMICONDUCTOR
Shandong Yiguang Electronic Joint stock Co., Ltd
BCW60LT1
NPN EPITAXIAL SILICON TRANSISTO
R
TECHNICAL DATA
PRE-AMPLIFIER,LOW LEVEL&LOW NOISE
*
Collector Current: Ic= 100mA
*
High Total Power Dissipation:Pc=225mW
ABSOLUTE MAXIMUM RATINGS at Ta=25℃
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation Ta=25℃*
Junction Temperature
Storage Temperature
Symbol
Vcbo
Vceo
Vebo
Ic
P
D
Tj
Tstg
Rating
32
32
5
100
225
150
-55-150
Unit
V
V
V
mA
mW
℃
℃
Package:
SOT-23
PIN:
STYLE
NO.1
1
2
3
B
E
C
ELECTRICAL CHARACTERISTICS at Ta=25℃
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage#
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
BCW60A
BCW60B
BCW60D
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter on Voltage
Output Capacitance
Current Gain-Bandwidth Product
Noise Figure
Vce(sat)
Vbe(sat)
Vbe(on)
Cob
f
T
NF
150
0.58
0.63
2.2
270
10
Symbol
BVcbo
BVceo
BVebo
Icbo
Iebo
Hfe
120
175
380
Min
32
32
5
50
50
220
310
630
0.55
1.00
0.75
3.5
V
V
V
PF
MHz
dB
Ic= 50mA Ib=1.25mA
Ic= 100mA Ib= 5mA
Vce= 5V Ic= 2mA
Vcb= 10V Ie=0 f=1MHz
Vce= 5V Ic= 10mA
Vce= 5V Ic= 0.2mA
f=1KHz Rs=2Kohm
Typ
Max
Unit
V
V
V
nA
nA
Test Conditions
Ic=10uA
Ie=0
Ic= 2mA Ib=0
Ie= 10uA
Vcb= 50V
Veb= 5V
Ic=0
Ie=0
Ic= 0
Vce= 5V Ic= 2mA
*
#
Total Device Dissipation : FR=1
X
0.75
X
0.062in Board,Derate 25℃.
Pulse Test : Pulse Width
≤300uS,Duty
cycle
≤2%
DEVICE MARKING:
BCW60ALT1=AA
BCW60BLT1=AB
BCW60DLT1=AD
SEMICONDUCTOR
Shandong Yiguang Electronic Joint stock Co., Ltd
ＢＣＷ６０ＬT1
NPN EPITAXIAL SILICON TRANSISTO
R
TECHNICAL DATA
ＢＣＷ６０Ａ／Ｂ／ＤＬＴ１
TYPICAL NOISE CHARACTERISTICS
(V
CE
= 5.0 Vdc, T
A
= 25°C)
20
100
I
C
= 1.0mA
e
n
, NOISE VOLTAGE (nV)
BANDWIDTH = 1.0 Hz
~
R
S
~ 0
50
20
I
C
=1.0mA
300µA
BANDWIDTH = 1.0 Hz
~
R
S
~
30µA
10
I
n
, NOISE CURRENT (pA)
10
5.0
2.0
1.0
0.5
0.2
0.1
10
20
50
100
200
500
100µA
7.0
5.0
100µA
3.0
10
µA
30µA
30µA
10µA
1.0k
2.0k
5.0k
10 k
2.0
10
20
50
100
200
500 1.0k
2.0k
5.0k
10 k
f, FREQUENCY (Hz)
f, FREQUENCY (Hz)
Figure 3. Noise Voltage
Figure 4. Noise Current
NOISE FIGURE CONTOURS
(V
CE
= 5.0 Vdc, T
A
= 25°C)
500k
200k
BANDWIDTH = 1.0 Hz
1.0M
500k
BANDWIDTH = 1.0 Hz
100k
50k
20k
10k
5.0k
2.0k
1.0k
500
200
100
50
10
20
30
50
70 100
200
300
500 700 1.0K
R
S
, SOURCE RESISTANCE (
Ω
)
R
S
, SOURCE RESISTANCE (
Ω
)
200k
100k
50k
20k
10k
5.0k
2.0k
1.0k
500
200
100
10
20
30
50
70
100
200
300
2.0 dB
3.0 dB 4.0dB
6.0 dB
10 dB
1.0 dB
2.0 dB
3.0dB
5.0 dB
8.0 dB
500 700 1.0K
I
C
, COLLECTOR CURRENT (µA)
I
C
, COLLECTOR CURRENT (µA)
Figure 5. Narrow Band, 100 Hz
500k
Figure 6. Narrow Band, 1.0 kHz
R
S
, SOURCE RESISTANCE (
Ω
)
200k
100k
50k
20k
10k
5.0k
2.0k
1.0k
500
200
100
50
10
20
30
50
70
100
200
10 Hz to 15.7Hz
1.0 dB
2.0 dB
3.0 dB
5.0 dB
8.0 dB
300
500 700 1.0K
I
C
, COLLECTOR CURRENT (µA)
Figure 7. Wideband
8
SEMICONDUCTOR
Shandong Yiguang Electronic Joint stock Co., Ltd
ＢＣＷ６０ＬT1
NPN EPITAXIAL SILICON TRANSISTO
R
TECHNICAL DATA
ＢＣＷ６０Ａ／Ｂ／ＤＬＴ１
TYPICAL NOISE CHARACTERISTICS
400
T
J
= 125°C
h
FE
, DC CURRENT GAIN
200
25°C
100
80
60
– 55°C
V
CE
= 1.0 V
V
CE
= 10 V
0.02 0.03
0.05 0.07
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0
10
20
30
50
70
100
40
0.0040.006 0.01
I
C
, COLLECTOR CURRENT (mA)
V
CE
, COLLECTOR– EMITTER VOLTAGE (VOLTS)
Figure 8. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
1.0
100
T
J
= 25°C
0.8
80
T
A
= 25°C
PULSE WIDTH =300
µs
DUTY CYCLE<2.0%
I
B
= 500
µA
400
µA
300
µA
0.6
I
C
= 1.0 mA
10 mA
50 mA
100 mA
60
200
µA
40
0.4
100
µA
20
0.2
0
0.002 0.0050.010.02
0.05 0.1 0.2
0.5 1.0 2.0
5.0
10
20
0
0
5.0
10
15
20
25
30
35
40
I
B
, BASE CURRENT (mA)
V
CE
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 9. Collector Saturation Region
1.4
Figure 10. Collector Characteristics
θ
V
, TEMPERATURE COEFFICIENTS (mV/°C)
1.6
T
J
= 25°C
1.2
*APPLIES for I
C
/ I
B
< h
FE
/ 2
0.8
V, VOLTAGE (VOLTS)
1.0
0.8
0.6
0.4
0.2
0
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
0
∗ θ
VC
for V
CE(sat)
25°C to 125°C
–55°C to 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= 1.0 V
–0.8
25°C to 125°C
–1.6
V
CE(sat)
@ I
C
/I
B
= 10
θ
VB
for V
BE
–55°C to 25°C
–2.4
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 11. “On” Voltages
Figure 12. Temperature Coefficients
SEMICONDUCTOR
Shandong Yiguang Electronic Joint stock Co., Ltd
ＢＣＷ６０ＬT1
NPN EPITAXIAL SILICON TRANSISTO
R
TECHNICAL DATA
TYPICAL DYNAMIC CHARACTERISTICS
300
200
100
70
1000
700
500
300
200
50
30
20
10
7.0
5.0
3.0
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
V
CC
= 3.0 V
I
C
/I
B
= 10
T
J
= 25°C
t
s
t, TIME (ns)
t
f
t, TIME (ns)
100
70
50
30
20
10
t
f
V
CC
= 3.0 V
I
C
/I
B
= 10
I
B1
=I
B2
T
J
= 25°C
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
t
d
@ V
BE(off)
= 0.5 Vdc
I
C
, COLLECTOR CURRENT (mA)
f
T
, CURRENT– GAIN — BANDWIDTH PRODUCT (MHz)
I
C
, COLLECTOR CURRENT (mA)
Figure 13. Turn–On Time
500
10.0
Figure 14. Turn–Off Time
300
T
J
= 25°C
f=100MHz
C, CAPACITANCE (pF)
7.0
T
J
= 25°C
f = 1.0MHz
C
ib
C
ob
V
CE
=20 V
200
5.0
5.0 V
3.0
100
2.0
70
50
0.5
1.0
0.7
1.0
2.0
3.0
5.0 7.0
10
20
30
50
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
I
C
, COLLECTOR CURRENT (mA)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 15. Current–Gain — Bandwidth Product
h
oe
, OUTPUT ADMITTANCE (
µmhos
)
20
200
100
70
50
Figure 16. Capacitance
h
ie
, INPUT IMPEDANCE ( kΩ )
10
7.0
5.0
3.0
2.0
~
h
fe
~
200 @ I
C
= 1.0 mA
V
CE
= 10 Vdc
f = 1.0 kHz
T
A
= 25°C
V
CE
= 10 Vdc
f = 1.0 kHz
T
A
= 25°C
h
fe
~
~
30
20
200 @ I
C
= 1.0 mA
1.0
0.7
0.5
0.3
0.2
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
10
7.0
5.0
3.0
2.0
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 17. Input Impedance
Figure 18. Output Admittance
SEMICONDUCTOR
Shandong Yiguang Electronic Joint stock Co., Ltd
ＢＣＷ６０ＬT1
NPN EPITAXIAL SILICON TRANSISTO
R
TECHNICAL DATA
ＢＣＷ６０Ａ／Ｂ／ＤＬＴ１
r( t) TRANSIENT THERMAL RESISTANCE(NORMALIZED)
1.0
0.7
0.5
0.3
0.2
D = 0.5
0.2
0.1
FIGURE 19A
0.05
P
(pk)
0.02
0.01
t
SINGLE PULSE
1
0.1
0.07
0.05
0.03
0.02
0.01
0.01
DUTY CYCLE, D = t
1
/ t
2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
(SEE AN–569)
t
2
Z
θJA(t)
= r(t) • R
θJA
T
J(pk)
– T
A
= P
(pk)
Z
θJA(t)
1.0k
2.0k
5.0k
10k
20k
50k
100k
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
t, TIME (ms)
Figure 19. Thermal Response
10
4
V
CC
= 30 Vdc
10
3
I
C
, COLLECTOR CURRENT (nA)
10
2
I
CEO
10
1
10
0
I
CBO
AND
I
CEX
@ V
BE(off)
= 3.0 Vdc
10
–1
10
–2
–4
–2
0
+20
+40
+60
+80
+100
+120
+140
+160
T
J
, JUNCTION TEMPERATURE (°C)
Figure 19A.
400
I
C
, COLLECTOR CURRENT (mA)
1.0 ms
200
100µs
10µs
1.0 s
dc
100
60
40
T
C
= 25°C
T
A
= 25°C
dc
T
J
= 150°C
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
2.0
4.0
6.0
8.0
10
20
10
6.0
4.0
20
40
V
CE
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 20.
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