NSVBC143ZDXV6T1G datasheet, PDF

NSVBC143ZDXV6T1G: DescriptionBipolar Transistor - Bipolar Junction Transistor (BJT) SOT-563 DUAL 4.7/47 K OH; Categorysemiconductor Discrete semiconductor The transistor Bipolar transistor - a bipolar junction transistor (BJT); File Size74KB，7 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn; Environmental Compliance

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Bipolar Transistor - Bipolar Junction Transistor (BJT) SOT-563 DUAL 4.7/47 K OH

Parameter Name	Attribute value
Maker	ON Semiconductor
Product Category	Bipolar Transistor - Bipolar Junction Transistor (BJT)
Installation style	SMD/SMT
Package/box	SOT-563-6
Transistor polarity	NPN
Configuration	Dual
Collector-emitter maximum voltage VCEO	50 V
Collector-base voltage VCBO	50 V
Emitter-Base voltage VEBO	6 V
Collector-emitter saturation voltage	0.25 V
Minimum operating temperature	- 55 C
Maximum operating temperature	+ 150 C
Encapsulation	Reel
Collector continuous current	100 mA
DC collector/Base Gain hfe Min	80
Pd-power dissipation	357 mW
Factory packaging quantity	4000

	NSVBC143ZDXV6T1G	NSVBC124XDXV6T1G
Description	Bipolar Transistor - Bipolar Junction Transistor (BJT) SOT-563 DUAL 4.7/47 K OH	Bipolar Transistor - Bipolar Junction Transistor (BJT) SS SOT563 DUALL 22/ 47
Maker	ON Semiconductor	ON Semiconductor
Product Category	Bipolar Transistor - Bipolar Junction Transistor (BJT)	Bipolar Transistor - Bipolar Junction Transistor (BJT)
Installation style	SMD/SMT	SMD/SMT
Package/box	SOT-563-6	SOT-563-6
Transistor polarity	NPN	NPN
Configuration	Dual	Dual
Collector-emitter maximum voltage VCEO	50 V	50 V
Collector-base voltage VCBO	50 V	50 V
Emitter-Base voltage VEBO	6 V	6 V
Collector-emitter saturation voltage	0.25 V	0.25 V
Minimum operating temperature	- 55 C	- 55 C
Maximum operating temperature	+ 150 C	+ 150 C
Encapsulation	Reel	Reel
Collector continuous current	100 mA	100 mA
DC collector/Base Gain hfe Min	80	80
Pd-power dissipation	357 mW	357 mW
Factory packaging quantity	4000	4000

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