EEWORLDEEWORLDEEWORLD

Part Number

Search
 PDF

MSMBJ36CAE3/TR

Description
ESD Suppressor/TVS Diode
CategoryDiscrete semiconductor    diode   
File Size523KB,8 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance
Download Datasheet Parametric View All

MSMBJ36CAE3/TR Overview

ESD Suppressor/TVS Diode

MSMBJ36CAE3/TR Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionR-PDSO-C2
Reach Compliance Codenot_compliant
ECCN codeEAR99
Is SamacsysN
Other featuresHIGH RELIABILITY
Maximum breakdown voltage44.2 V
Minimum breakdown voltage40 V
Breakdown voltage nominal value42.1 V
Maximum clamping voltage58.1 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-214AA
JESD-30 codeR-PDSO-C2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation600 W
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityBIDIRECTIONAL
Maximum power dissipation1.38 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage36 V
surface mountYES
technologyAVALANCHE
Terminal surfaceMatte Tin (Sn) - annealed
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号