3000W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB, PLASTIC PACKAGE-2
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
Maker | Microsemi |
Parts packaging code | DO-215AB |
package instruction | R-PDSO-G2 |
Contacts | 2 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Is Samacsys | N |
Maximum breakdown voltage | 11.1 V |
Minimum breakdown voltage | 10 V |
Breakdown voltage nominal value | 10.55 V |
Maximum clamping voltage | 15.4 V |
Configuration | SINGLE |
Diode component materials | SILICON |
Diode type | TRANS VOLTAGE SUPPRESSOR DIODE |
JEDEC-95 code | DO-215AB |
JESD-30 code | R-PDSO-G2 |
JESD-609 code | e0 |
Humidity sensitivity level | 1 |
Maximum non-repetitive peak reverse power dissipation | 3000 W |
Number of components | 1 |
Number of terminals | 2 |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
polarity | BIDIRECTIONAL |
Maximum power dissipation | 1.61 W |
Certification status | Not Qualified |
Maximum repetitive peak reverse voltage | 9 V |
surface mount | YES |
technology | AVALANCHE |
Terminal surface | Tin/Lead (Sn10Pb90) |
Terminal form | GULL WING |
Terminal location | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED |
Base Number Matches | 1 |