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BYV430J-600PQ

Description
Rectifier BYV430J-600PQ/TO3PF/STANDARD M
Categorysemiconductor    Discrete semiconductor    Diode rectifier with    rectifier   
File Size268KB,11 Pages
ManufacturerWeEn Semiconductors
Environmental Compliance
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BYV430J-600PQ Overview

Rectifier BYV430J-600PQ/TO3PF/STANDARD M

BYV430J-600PQ Parametric

Parameter NameAttribute value
MakerWeEn Semiconductors
Product CategoryRectifier
Installation styleThrough Hole
Package/boxTO-3PF-3
Vr - 反向电压 600 V
If - forward current30 A
typeFast Recovery Rectifiers
ConfigurationDual Common Cathode
Vf - forward voltage1.5 V
Maximum surge current200 A
Ir - 反向电流 10 uA
Recovery Time64 ns
Maximum operating temperature+ 175 C
EncapsulationTube
productRectifiers
Factory packaging quantity480
BYV430J-600P
Dual ultrafast power diode
3 May 2017
Product data sheet
1. General description
Dual ultrafast power diodes in a TO3PF plastic package.
2. Features and benefits
Very low on-state loss
Reduces switching losses in associated MOSFET or IGBT
Low leakage current
Isolated plastic package
3. Applications
Active PFC in air conditioner
S.M.P.S Power Factor Correction (PFC)
Half-bridge / full-bridge switched-mode power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol
V
R
I
F(AV)
I
FRM
I
FSM
Parameter
reverse voltage
average forward
current
Conditions
DC
δ = 0.5 ; T
h
≤ 64 °C; square-wave
pulse; per diode;
Fig. 1; Fig. 2; Fig. 3
Min
-
-
-
-
-
Typ
-
-
-
-
-
Max
600
30
60
180
200
Unit
V
A
A
A
A
repetitive peak forward δ = 0.5 ; t
p
= 25 µs; square-wave pulse
current
non-repetitive peak
forward current
t
p
= 10 ms; T
j(init)
= 25 °C; sine-wave
pulse; per diode;
Fig. 4
t
p
= 8.3 ms; T
j(init)
= 25 °C; sine-wave
pulse; per diode
Static characteristics
V
F
forward voltage
I
F
= 30 A; T
j
= 25 °C;
Fig. 6
I
F
= 30 A; T
j
= 150 °C;
Fig. 6
Dynamic characteristics
t
rr
reverse recovery time
I
F
= 30 A; V
R
= 30 V; dI
F
/dt = 200 A/µs;
T
j
= 25 °C;
Fig. 7
I
F
= 30 A; V
R
= 200 V; dI
F
/dt = 200 A/
µs; T
j
= 25 °C;
Fig. 7
I
F
= 30 A; V
R
= 200 V; dI
F
/dt = 200 A/
µs; T
j
= 125 °C;
Fig. 7
-
-
-
53
64
113
90
-
-
ns
ns
ns
-
-
1.5
1.25
2
-
V
V
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