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RGF1M

Description
1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214BA
CategoryDiscrete semiconductor    diode   
File Size44KB,3 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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RGF1M Overview

1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214BA

RGF1M Parametric

Parameter NameAttribute value
Brand NameFairchild Semiconduc
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeDO-214
package instructionR-PDSO-C2
Contacts2
Manufacturer packaging code2LD, SMA, JEDEC DO-214, VARIATION AC
Reach Compliance Code_compli
ECCN codeEAR99
Samacsys DescriptiON SEMICONDUCTOR - RGF1M - DIODE, FAST, 1A, 1000V, SMD, DO-214
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JEDEC-95 codeDO-214AC
JESD-30 codeR-PDSO-C2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current30 A
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation1.76 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1000 V
Maximum reverse recovery time0.5 µs
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperature30

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