TLP3475
Photocouplers
Photorelay
TLP3475
1. Applications
•
•
•
•
Measuring Instruments
High-Speed Logic IC Testers
High-Speed Memory Testers
ATE (Automatic Test Equipment)
2. General
The TLP3475 photorelay consists of a photo MOSFET optically coupled to an infrared light emitting diode. It is
housed in a VSON4 package. The TLP3475 features a low CR product and extremely low on-state resistance,
and thus delivers high on-state current. Additionally, the TLP3475 offers low insertion loss of a high-frequency
signal and thus prevents the degradation of a rapidly rising signal. The TLP3475 also features low off-state
current and low output pin capacitance, making it suitable for high-frequency measuring instrument applications.
3. Features
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
Normally opened (1-Form-A)
OFF-state output terminal voltage: 50 V (min)
Trigger LED current: 3 mA (max)
ON-state current: 300 mA (max)
ON-state resistance: 1.0
Ω
(typ.), 1.5
Ω
(max)
Output capacitance: 12 pF(typ.), 20 pF(max)
Isolation voltage: 500 Vrms (min)
ERT (Equivalent Rise Time): 40 ps(typ.), 90 ps(max)
4. Packaging and Pin Assignment
1: Anode
2: Cathode
3: Drain
4: Drain
11-2D1A
Start of commercial production
©2016-2018
Toshiba Electronic Devices & Storage Corporation
1
2014-05
2018-05-14
Rev.8.0
TLP3475
5. Internal Circuit
6. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
a
= 25
)
Characteristics
LED
Input forward current
Input forward current derating
Input reverse voltage
Input power dissipation
Input power dissipation derating
Junction temperature
Detector OFF-state output terminal voltage
ON-state current
ON-state current derating
ON-state current (pulsed)
Output power dissipation
Output power dissipation derating
Junction temperature
Common Storage temperature
Operating temperature
Lead soldering temperature
Isolation voltage
(10 s)
AC, 60 s, R.H.
≤
60 %
(T
a
≥
25
)
(T
a
≥
25
)
(t = 100 ms, Duty = 1/10)
(T
a
≥
25
)
(T
a
≥
25
)
Symbol
I
F
∆I
F
/∆T
a
V
R
P
D
∆P
D
/∆T
a
T
j
V
OFF
I
ON
∆I
ON
/∆T
a
I
ONP
P
O
∆P
O
/∆T
a
T
j
T
stg
T
opr
T
sol
BV
S
(Note 1)
Note
Rating
30
-0.3
5
50
-0.5
125
50
300
-3.0
900
240
-2.4
125
-40 to 125
-40 to 110
260
500
Vrms
Unit
mA
mA/
V
mW
mW/
V
mA
mA/
mA
mW
mW/
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: This device is considered as a two-terminal device: Pins 1 and 2 are shorted together, and pins 3 and 4 are
shorted together.
Note:
This device is sensitive to electrostatic discharge (ESD). Extreme ESD conditions should be guarded against
by using proper antistatic precautions for the worktable, operator, solder iron, soldering equipment and so on.
7. Recommended Operating Conditions (Note)
Characteristics
Supply voltage
Input forward current
ON-state current
Operating temperature
Symbol
V
DD
I
F
I
ON
T
opr
Note
Min
5
-20
Typ.
7.5
Max
40
20
300
85
Unit
V
mA
mA
Note:
The recommended operating conditions are given as a design guide necessary to obtain the intended
performance of the device. Each parameter is an independent value. When creating a system design using
this device, the electrical characteristics specified in this data sheet should also be considered.
©2016-2018
Toshiba Electronic Devices & Storage Corporation
2
2018-05-14
Rev.8.0
TLP3475
8. Electrical Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
LED
Input forward voltage
Input reverse current
Input capacitance
Detector OFF-state current
Output capacitance
Symbol
V
F
I
R
C
t
I
OFF
C
OFF
Note
Test Condition
I
F
= 10 mA
V
R
= 5 V
V = 0 V, f = 1 MHz
V
OFF
= 50 V
V = 0 V, f = 100 MHz, t < 1 s
Min
1.1
Typ.
1.27
30
12
Max
1.4
10
1
20
Unit
V
µA
pF
nA
pF
9. Coupled Electrical Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
Trigger LED current
Return LED current
ON-state resistance
Symbol
I
FT
I
FC
R
ON
Note
Test Condition
I
ON
= 100 mA
I
OFF
= 10
µA
I
ON
= 300 mA, I
F
= 5 mA, t < 1 s
Min
0.1
Typ.
1.0
Max
3
1.5
Ω
Unit
mA
10. Isolation Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
Total capacitance (input to output)
Isolation resistance
Isolation voltage
Symbol
C
S
R
S
BV
S
Note
Test Condition
Min
500
Typ.
1.0
10
14
1000
1000
Max
Vdc
Unit
pF
Ω
Vrms
(Note 1) V
S
= 0 V, f = 1 MHz
(Note 1) V
S
= 500 V, R.H.
≤
60 %
(Note 1) AC, 60 s
AC, 1 s in oil
DC, 60 s in oil
Note 1: This device is considered as a two-terminal device: Pins 1 and 2 are shorted together, and pins 3 and 4 are
shorted together.
©2016-2018
Toshiba Electronic Devices & Storage Corporation
3
2018-05-14
Rev.8.0
TLP3475
11. Switching Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
Turn-on time
Turn-off time
Turn-on time
Turn-off time
Equivalent rise time
Symbol
t
ON
t
OFF
t
ON
t
OFF
ERT
Note
Test Condition
See Fig. 11.1.
R
L
= 200
Ω,
V
DD
= 20 V, I
F
= 5 mA
See Fig. 11.1.
R
L
= 200
Ω,
V
DD
= 20 V, I
F
= 10 mA
See Fig. 11.2.
I
F
= 5 mA, V
DD
= 0.25 V, t
r(in)
= 25 ps
Min
Typ.
40
Max
500
400
250
400
90
ps
Unit
µs
Fig. 11.1 Switching Time Test Circuit and Waveform
Fig. 11.2 ERT (Equivalent Rise Time)
©2016-2018
Toshiba Electronic Devices & Storage Corporation
4
2018-05-14
Rev.8.0
TLP3475
12. Characteristics Curves (Note)
Fig. 12.1 I
F
- T
a
Fig. 12.2 I
ON
- T
a
Fig. 12.3 I
F
- V
F
Fig. 12.4 I
ON
- V
ON
Fig. 12.5 R
ON
- T
a
Fig. 12.6 I
FT
- T
a
©2016-2018
Toshiba Electronic Devices & Storage Corporation
5
2018-05-14
Rev.8.0
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