EEWORLDEEWORLDEEWORLD

Part Number

Search

1N4099 BK

Description
Zener diode 6.8Vz 200Ohm 5.2Vr 35.0mA 250mW
Categorysemiconductor    Discrete semiconductor    Diode rectifier with    Zener diode   
File Size430KB,4 Pages
ManufacturerCentral Semiconductor
Environmental Compliance
Download Datasheet Parametric View All

1N4099 BK Overview

Zener diode 6.8Vz 200Ohm 5.2Vr 35.0mA 250mW

1N4099 BK Parametric

Parameter NameAttribute value
MakerCentral Semiconductor
Product CategoryZener diode
Vz - Zener voltage6.8 V
Installation styleAxial
Package/boxDO-35
Pd-power dissipation250 mW
voltage tolerance5 %
Zener current35 mA
Zz - Zener impedance200 Ohms
Minimum operating temperature- 65 C
Maximum operating temperature+ 200 C
ConfigurationSingle
Test current250 uA
EncapsulationBulk
diameter2.29 mm
length5.08 mm
Ir - 反向电流 10 uA
Factory packaging quantity2500
Vf - forward voltage1.1 V
1N4099 THRU 1N4135
SILICON ZENER DIODE
LOW NOISE
6.8 VOLT THRU 100 VOLT
250mW, 5% TOLERANCE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 1N4099 series
silicon Zener diode is designed for low leakage, low
current, and low noise applications.
MARKING: FULL PART NUMBER
DO-35 CASE
MAXIMUM RATINGS:
(TA=25°C)
Power Dissipation
Operating and Storage Junction Temperature
SYMBOL
PD
TJ, Tstg
250
-65 to +200
UNITS
mW
°C
ELECTRICAL CHARACTERISTICS:
(TA=25°C) VF=1.1V MAX @ IF=200mA (for all types)
ZENER
VOLTAGE
VZ @ IZT
MIN
V
1N4099
1N4100
1N4101
1N4102
1N4103
1N4104
1N4105
1N4106
1N4107
1N4108
1N4109
1N4110
1N4111
1N4112
1N4113
1N4114
1N4115
1N4116
1N4117
1N4118
1N4119
1N4120
1N4121
6.460
7.125
7.790
8.265
8.645
9.50
10.45
11.40
12.35
13.30
14.25
15.20
16.15
17.10
18.05
19.00
20.90
22.80
23.75
25.65
26.60
28.50
31.35
NOM
V
6.8
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
22
24
25
27
28
30
33
MAX
V
7.140
7.875
8.610
9.135
9.555
10.50
11.55
12.60
13.65
14.70
15.75
16.80
17.85
18.90
19.95
21.00
23.10
25.20
26.25
28.35
29.40
31.50
34.65
TEST
CURRENT
IZT
μA
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
MAXIMUM
ZENER
IMPEDANCE
ZZT @ IZT
Ω
200
200
200
200
200
200
200
200
200
200
100
100
100
100
150
150
150
150
150
150
200
200
200
MAXIMUM
REVERSE
CURRENT
IR
μA
10
10
1.0
1.0
1.0
1.0
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
@
VR
V
5.2
5.7
6.3
6.7
7.0
7.6
8.5
9.2
9.9
10.7
11.4
12.2
13.0
13.7
14.5
15.2
16.8
18.3
19.0
20.5
21.3
22.8
25.1
MAXIMUM
ZENER
CURRENT
IZM
mA
35.0
31.8
29.0
27.4
26.2
24.8
21.6
20.4
19.0
17.5
16.3
15.4
14.5
13.2
12.5
11.9
10.8
9.9
9.5
8.8
8.5
7.9
7.2
MAXIMUM
NOISE
DENSITY
ND @ 250μA
μV/ Hz
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
TYPE
R1 (4-February 2014)

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号