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MS1N8163

Description
ESD Suppressor/TVS Diode Low Capacitance TVS
CategoryCircuit protection    ESD suppressor/TVS diode   
File Size399KB,7 Pages
ManufacturerMicrosemiMicrochip
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ESD Suppressor/TVS Diode Low Capacitance TVS

MS1N8163 Parametric

Parameter NameAttribute value
MakerMicrosemiMicrochip
Product CategoryESD Suppressor/TVS Diode
RoHSN
Vesd - Electrostatic discharge voltage contact-
Vesd - Electrostatic discharge voltage air gap-
polarityUnidirectional
Number of channels1 Channel
Termination typeAxial
Breakdown voltage31.4 V
Operating Voltage28 V
clamping voltage45.7 V
Ipp - peak pulse current3.28 A
Cd - 二极管电容 4 pF
Package/boxA-Package-2
Minimum operating temperature- 55 C
Maximum operating temperature+ 175 C
EncapsulationFoil Bag
Current rating500 nA
Factory packaging quantity1

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Maker MicrosemiMicrochip MicrosemiMicrochip MicrosemiMicrochip MicrosemiMicrochip MicrosemiMicrochip MicrosemiMicrochip
Product Category ESD Suppressor/TVS Diode ESD Suppressor/TVS Diode ESD Suppressor/TVS Diode ESD Suppressor/TVS Diode ESD Suppressor/TVS Diode ESD Suppressor/TVS Diode
RoHS N N N N N N
polarity Unidirectional Unidirectional Unidirectional Unidirectional Unidirectional Unidirectional
Number of channels 1 Channel 1 Channel 1 Channel 1 Channel 1 Channel 1 Channel
Termination type Axial Axial Axial SMD/SMT Axial Axial
Breakdown voltage 31.4 V 9.5 V 34.2 V 15.2 V 7.79 V 11.4 V
Operating Voltage 28 V 8.5 V 30 V 13 V 6.8 V 10 V
clamping voltage 45.7 V 14.5 V 49.9 V 22.3 V 12.8 V 16.9 V
Ipp - peak pulse current 3.28 A 10.3 A 3.01 A 6.73 A 11.7 A 8.88 A
Cd - 二极管电容 4 pF 4 pF 4 pF 4 pF 4 pF 4 pF
Package/box A-Package-2 A-Package-2 A-Package-2 A-Package-2 (MELF) A-Package-2 A-Package-2
Minimum operating temperature - 55 C - 55 C - 55 C - 55 C - 55 C - 55 C
Maximum operating temperature + 175 C + 175 C + 175 C + 175 C + 175 C + 175 C
Current rating 500 nA 10 uA 500 nA 1 uA 20 uA 1 uA
Factory packaging quantity 1 1 1 1 1 1

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