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SSM3J355R,LF

Description
MOSFET LowON Res MOSFET ID=-6A VDSS=-20V
Categorysemiconductor    Discrete semiconductor    The transistor    MOSFET   
File Size366KB,10 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
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SSM3J355R,LF Overview

MOSFET LowON Res MOSFET ID=-6A VDSS=-20V

SSM3J355R,LF Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
Product CategoryMOSFET
technologySi
Installation styleSMD/SMT
Package/boxSOT-23F-3
Number of channels1 Channel
Transistor polarityP-Channel
Vds - drain-source breakdown voltage20 V
Id-continuous drain current6 A
Rds On - drain-source on-resistance23 mOhms
Vgs th-gate-source threshold voltage1 V
Vgs - gate-source voltage10 V
Qg-gate charge16.6 nC
Minimum operating temperature-
Maximum operating temperature+ 150 C
Pd-power dissipation2 W
ConfigurationSingle
channel modeEnhancement
EncapsulationCut Tape
EncapsulationMouseReel
EncapsulationReel
Transistor type1 P-Channel
Forward transconductance - minimum12.8 S
Factory packaging quantity3000
Typical shutdown delay time320 ns
Typical switch-on delay time30 ns
SSM3J355R
MOSFETs
Silicon P-Channel MOS
SSM3J355R
1. Applications
Power Management Switches
2. Features
(1)
(2)
1.8 V drive
Low drain-source on-resistance
: R
DS(ON)
= 36.0 mΩ (typ.) (V
GS
= -1.8 V)
R
DS(ON)
= 28.0 mΩ (typ.) (V
GS
= -2.5 V)
R
DS(ON)
= 23.0 mΩ (typ.) (V
GS
= -4.5 V)
3. Packaging and Internal Circuit
1: Gate
2: Source
3: Drain
SOT-23F
Start of commercial production
©2016 Toshiba Corporation
1
2016-11
2016-11-30
Rev.1.0
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