S29GL-N
MirrorBit™ Flash Family
S29GL512N, S29GL256N, S29GL128N
512 Megabit, 256 Megabit, and 128 Megabit,
3.0 Volt-only Page Mode Flash Memory featuring
110 nm MirrorBit™ Process Technology
Data Sheet
Notice to Readers:
This document states the current technical specifications
regarding the Spansion product(s) described herein. Spansion Inc. deems the
products to have been in sufficient production volume such that subsequent
versions of this document are not expected to change. However, typographical
or specification corrections, or modifications to the valid combinations offered
may occur.
Publication Number
S29GL-N_00
Revision
B
Amendment
3
Issue Date
October 13, 2006
D a t a
S h e e t
Notice On Data Sheet Designations
Spansion Inc. issues data sheets with Advance Information or Preliminary designations to advise
readers of product information or intended specifications throughout the product life cycle, in-
cluding development, qualification, initial production, and full production. In all cases, however,
readers are encouraged to verify that they have the latest information before finalizing their de-
sign. The following descriptions of Spansion data sheet designations are presented here to high-
light their presence and definitions.
Advance Information
The Advance Information designation indicates that Spansion Inc. is developing one or more
specific products, but has not committed any design to production. Information presented in a
document with this designation is likely to change, and in some cases, development on the prod-
uct may discontinue. Spansion Inc. therefore places the following conditions upon Advance Infor-
mation content:
“This document contains information on one or more products under development at Spansion Inc. The
information is intended to help you evaluate this product. Do not design in this product without con-
tacting the factory. Spansion Inc. reserves the right to change or discontinue work on this proposed
product without notice.”
Preliminary
The Preliminary designation indicates that the product development has progressed such that a
commitment to production has taken place. This designation covers several aspects of the prod-
uct life cycle, including product qualification, initial production, and the subsequent phases in the
manufacturing process that occur before full production is achieved. Changes to the technical
specifications presented in a Preliminary document should be expected while keeping these as-
pects of production under consideration. Spansion places the following conditions upon Prelimi-
nary content:
“This document states the current technical specifications regarding the Spansion product(s) described
herein. The Preliminary status of this document indicates that product qualification has been completed,
and that initial production has begun. Due to the phases of the manufacturing process that require
maintaining efficiency and quality, this document may be revised by subsequent versions or modifica-
tions due to changes in technical specifications.”
Combination
Some data sheets will contain a combination of products with different designations (Advance In-
formation, Preliminary, or Full Production). This type of document will distinguish these products
and their designations wherever necessary, typically on the first page, the ordering information
page, and pages with DC Characteristics table and AC Erase and Program table (in the table
notes). The disclaimer on the first page refers the reader to the notice on this page.
Full Production (No Designation on Document)
When a product has been in production for a period of time such that no changes or only nominal
changes are expected, the Preliminary designation is removed from the data sheet. Nominal
changes may include those affecting the number of ordering part numbers available, such as the
addition or deletion of a speed option, temperature range, package type, or V
IO
range. Changes
may also include those needed to clarify a description or to correct a typographical error or incor-
rect specification. Spansion Inc. applies the following conditions to documents in this category:
“This document states the current technical specifications regarding the Spansion product(s) described
herein. Spansion Inc. deems the products to have been in sufficient production volume such that sub-
sequent versions of this document are not expected to change. However, typographical or specification
corrections, or modifications to the valid combinations offered may occur.”
Questions regarding these document designations may be directed to your local sales office.
ii
S29GL-N MirrorBit™ Flash Family
S29GL-N_00_B3 October 13, 2006
S29GL-N
MirrorBit™ Flash Family
S29GL512N, S29GL256N, S29GL128N
512 Megabit, 256 Megabit, and 128 Megabit,
3.0 Volt-only Page Mode Flash Memory featuring
110 nm MirrorBit™ Process Technology
Data Sheet
Distinctive Characteristics
Architectural Advantages
Single power supply operation
— 3 volt read, erase, and program operations
Enhanced VersatileI/O™ control
— All input levels (address, control, and DQ input levels)
and outputs are determined by voltage on V
IO
input.
V
IO
range is 1.65 to V
CC
Manufactured on 110 nm MirrorBit process
technology
Secured Silicon Sector region
— 128-word/256-byte sector for permanent, secure
identification through an 8-word/16-byte random
Electronic Serial Number, accessible through a
command sequence
— May be programmed and locked at the factory or by
the customer
Flexible sector architecture
— S29GL512N: Five hundred twelve 64 Kword (128
Kbyte) sectors
— S29GL256N: Two hundred fifty-six 64 Kword (128
Kbyte) sectors
— S29GL128N: One hundred twenty-eight 64 Kword
(128 Kbyte) sectors
Compatibility with JEDEC standards
— Provides pinout and software compatibility for
single-power supply flash, and superior inadvertent
write protection
100,000 erase cycles per sector typical
20-year data retention typical
512 Mb
Package options
— 56-pin TSOP
— 64-ball Fortified BGA
Software & Hardware Features
Software features
— Program Suspend and Resume: read other sectors
before programming operation is completed
— Erase Suspend and Resume: read/program other
sectors before an erase operation is completed
— Data# polling and toggle bits provide status
— Unlock Bypass Program command reduces overall
multiple-word programming time
— CFI (Common Flash Interface) compliant: allows host
system to identify and accommodate multiple flash
devices
Hardware features
— Advanced Sector Protection
— WP#/ACC input accelerates programming time
(when high voltage is applied) for greater throughput
during system production. Protects first or last sector
regardless of sector protection settings
— Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) detects program or
erase cycle completion
Product Availability Table
Density
Init. Access
110 ns
100 ns
110 ns
256 Mb
100 ns
90 ns
110 ns
128 Mb
100 ns
90 ns
V
CC
Full
Full
Full
Full
Regulated
Full
Full
Regulated
Availability
Now
Now
Now
Now
Now
Now
Now
Now
Performance Characteristics
High performance
90 ns access time (S29GL128N, S29GL256N)
100 ns (S29GL512N)
8-word/16-byte page read buffer
25 ns page read times
16-word/32-byte write buffer reduces overall
programming time for multiple-word updates
Low power consumption (typical values at 3.0 V, 5
MHz)
— 25 mA typical active read current;
— 50 mA typical erase/program current
— 1 µA typical standby mode current
—
—
—
—
—
Publication Number
S29GL-N_00
Revision
B
Amendment
3
Issue Date
October 13, 2006
D a t a
S h e e t
General Description
The S29GL512/256/128N family of devices are 3.0V single power flash memory manufac-
tured using 110 nm MirrorBit technology. The S29GL512N is a 512 Mbit, organized as
33,554,432 words or 67,108,864 bytes. The S29GL256N is a 256 Mbit, organized as
16,777,216 words or 33,554,432 bytes. The S29GL128N is a 128 Mbit, organized as
8,388,608 words or 16,777,216 bytes. The devices have a 16-bit wide data bus that can also
function as an 8-bit wide data bus by using the BYTE# input. The device can be programmed
either in the host system or in standard EPROM programmers.
Access times as fast as 90 ns (S29GL128N, S29GL256N), 100 ns (S29GL512N) are available.
Note that each access time has a specific operating voltage range (V
CC
) and an I/O voltage
range (V
IO
), as specified in the
Product Selector Guide‚ on page 6
and the
Ordering Infor-
mation‚ on page 12.
The devices are offered in a 56-pin TSOP or 64-ball Fortified BGA
package. Each device has separate chip enable (CE#), write enable (WE#) and output enable
(OE#) controls.
Each device requires only a
single 3.0 volt power supply
for both read and write functions.
In addition to a V
CC
input, a high-voltage
accelerated program (WP#/ACC)
input provides
shorter programming times through increased current. This feature is intended to facilitate
factory throughput during system production, but may also be used in the field if desired.
The devices are entirely command set compatible with the
JEDEC single-power-supply
Flash standard.
Commands are written to the device using standard microprocessor write
timing. Write cycles also internally latch addresses and data needed for the programming and
erase operations.
The
sector erase architecture
allows memory sectors to be erased and reprogrammed
without affecting the data contents of other sectors. The device is fully erased when shipped
from the factory.
Device programming and erasure are initiated through command sequences. Once a program
or erase operation has begun, the host system need only poll the DQ7 (Data# Polling) or DQ6
(toggle)
status bits
or monitor the
Ready/Busy# (RY/BY#)
output to determine whether
the operation is complete. To facilitate programming, an
Unlock Bypass
mode reduces com-
mand sequence overhead by requiring only two write cycles to program data instead of four.
The
Enhanced VersatileI/O™
(V
IO
) control allows the host system to set the voltage levels
that the device generates and tolerates on all input levels (address, chip control, and DQ input
levels) to the same voltage level that is asserted on the V
IO
pin. This allows the device to
operate in a 1.8 V or 3 V system environment as required.
Hardware data protection
measures include a low V
CC
detector that automatically inhibits
write operations during power transitions.
Persistent Sector Protection
provides in-sys-
tem, command-enabled protection of any combination of sectors using a single power supply
at V
CC
.
Password Sector Protection
prevents unauthorized write and erase operations in
any combination of sectors through a user-defined 64-bit password.
The
Erase Suspend/Erase Resume
feature allows the host system to pause an erase op-
eration in a given sector to read or program any other sector and then complete the erase
operation. The
Program Suspend/Program Resume
feature enables the host system to
pause a program operation in a given sector to read any other sector and then complete the
program operation.
The
hardware RESET# pin
terminates any operation in progress and resets the device,
after which it is then ready for a new operation. The RESET# pin may be tied to the system
reset circuitry. A system reset would thus also reset the device, enabling the host system to
read boot-up firmware from the Flash memory device.
2
S29GL-N MirrorBit™ Flash Family
S29GL-N_00_B3 October 13, 2006
D a t a
S h e e t
The device reduces power consumption in the
standby mode
when it detects specific voltage
levels on CE# and RESET#, or when addresses have been stable for a specified period of time.
The
Secured Silicon Sector
provides a 128-word/256-byte area for code or data that can
be permanently protected. Once this sector is protected, no further changes within the sector
can occur.
The
Write Protect (WP#/ACC)
feature protects the first or last sector by asserting a logic
low on the WP# pin.
MirrorBit flash technology combines years of Flash memory manufacturing experience to pro-
duce the highest levels of quality, reliability and cost effectiveness. The device electrically
erases all bits within a sector simultaneously via hot-hole assisted erase. The data is pro-
grammed using hot electron injection.
S29GL-N_00_B3 October 13, 2006
S29GL-N MirrorBit™ Flash Family
3
RF/Wirelessly
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