SQ4064EY-T1_GE3 datasheet, PDF

SQ4064EY-T1_GE3: DescriptionMOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified; Categorysemiconductor Discrete semiconductor The transistor MOSFET; File Size114KB，8 Pages; ManufacturerVishay; Websitehttp://www.vishay.com; Environmental Compliance

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MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified

Parameter Name	Attribute value
Maker	Vishay
Product Category	MOSFET
technology	Si
Installation style	SMD/SMT
Package/box	SO-8
Number of channels	1 Channel
Transistor polarity	N-Channel
Vds - drain-source breakdown voltage	60 V
Id-continuous drain current	12 A
Rds On - drain-source on-resistance	16.5 mOhms
Vgs th-gate-source threshold voltage	1.5 V
Vgs - gate-source voltage	20 V
Qg-gate charge	43 nC
Minimum operating temperature	- 55 C
Maximum operating temperature	+ 175 C
Pd-power dissipation	6.8 W
Configuration	Single
channel mode	Enhancement
qualifications	AEC-Q101
Encapsulation	Cut Tape
Encapsulation	MouseReel
Encapsulation	Reel
high	1.75 mm
length	4.9 mm
series	SQ
Transistor type	1 N-Channel
width	3.9 mm
Forward transconductance - minimum	85 S
Fall time	13 ns
Rise Time	9.5 ns
Factory packaging quantity	2500
Typical shutdown delay time	33 ns
Typical switch-on delay time	16 ns
unit weight	74 mg

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