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S29WS256N0PBFW113

Description
256/128/64 Megabit (16/8/4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
Categorystorage    storage   
File Size986KB,95 Pages
ManufacturerSPANSION
Websitehttp://www.spansion.com/
Environmental Compliance
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S29WS256N0PBFW113 Overview

256/128/64 Megabit (16/8/4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory

S29WS256N0PBFW113 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSPANSION
Parts packaging codeBGA
package instruction11.60 X 8 MM, LEAD FREE, PLASTIC, FBGA-84
Contacts84
Reach Compliance Codeunknow
ECCN code3A991.B.1.A
Maximum access time70 ns
Other featuresSYNCHRONOUS BURST MODE OPERATION POSSIBLE
startup blockBOTTOM/TOP
command user interfaceYES
Universal Flash InterfaceYES
Data pollingYES
JESD-30 codeR-PBGA-B84
JESD-609 codee1
length11.6 mm
memory density268435456 bi
Memory IC TypeFLASH
memory width16
Humidity sensitivity level3
Number of functions1
Number of departments/size8,254
Number of terminals84
word count16777216 words
character code16000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
organize16MX16
Package body materialPLASTIC/EPOXY
encapsulated codeVFBGA
Encapsulate equivalent codeBGA84,10X12,32
Package shapeRECTANGULAR
Package formGRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply1.8 V
Programming voltage1.8 V
Certification statusNot Qualified
Maximum seat height1 mm
Department size16K,64K
Maximum standby current0.000005 A
Maximum slew rate0.06 mA
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal surfaceTin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
switch bitYES
typeNOR TYPE
width8 mm
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