Bipolar Transistor - Bipolar Junction Transistor (BJT) AF TRANSISTOR
Parameter Name | Attribute value |
Maker | Infineon |
Product Category | Bipolar Transistor - Bipolar Junction Transistor (BJT) |
Installation style | SMD/SMT |
Package/box | SOT-323-3 |
Transistor polarity | PNP |
Configuration | Single |
Collector-emitter maximum voltage VCEO | 45 V |
Collector-base voltage VCBO | 50 V |
Emitter-Base voltage VEBO | 5 V |
Collector-emitter saturation voltage | 250 mV |
Maximum DC collector current | 200 mA |
Gain bandwidth product fT | 250 MHz |
Minimum operating temperature | - 65 C |
Maximum operating temperature | + 150 C |
series | BC857 |
DC current gain hFE maximum | 800 |
Encapsulation | Cut Tape |
Encapsulation | MouseReel |
Encapsulation | Reel |
Collector continuous current | 100 mA |
DC collector/Base Gain hfe Min | 420 |
Pd-power dissipation | 330 mW |
Factory packaging quantity | 3000 |
unit weight | 5 mg |