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BC 857CW H6327

Description
Bipolar Transistor - Bipolar Junction Transistor (BJT) AF TRANSISTOR
Categorysemiconductor    Discrete semiconductor    The transistor    Bipolar transistor - a bipolar junction transistor (BJT)   
File Size857KB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BC 857CW H6327 Overview

Bipolar Transistor - Bipolar Junction Transistor (BJT) AF TRANSISTOR

BC 857CW H6327 Parametric

Parameter NameAttribute value
MakerInfineon
Product CategoryBipolar Transistor - Bipolar Junction Transistor (BJT)
Installation styleSMD/SMT
Package/boxSOT-323-3
Transistor polarityPNP
ConfigurationSingle
Collector-emitter maximum voltage VCEO45 V
Collector-base voltage VCBO50 V
Emitter-Base voltage VEBO5 V
Collector-emitter saturation voltage250 mV
Maximum DC collector current200 mA
Gain bandwidth product fT250 MHz
Minimum operating temperature- 65 C
Maximum operating temperature+ 150 C
seriesBC857
DC current gain hFE maximum800
EncapsulationCut Tape
EncapsulationMouseReel
EncapsulationReel
Collector continuous current100 mA
DC collector/Base Gain hfe Min420
Pd-power dissipation330 mW
Factory packaging quantity3000
unit weight5 mg
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