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1N4936G

Description
1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size118KB,2 Pages
ManufacturerBytes
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1N4936G Overview

1 A, 400 V, SILICON, SIGNAL DIODE, DO-41

1N4933G
THRU
1N4937G
1.0 AMP GLASS PASSIVATED FAST RECOVERY RECTIFIERS
VOLTAGE RANGE
50 to 600 Volts
CURRENT
FEATURES
* Low forward voltage drop
* Low leakage current
* High reliability
* High current capability
* Glass passivated junction
1.0 Ampere
DO-41
.107(2.7)
.080(2.0)
DIA.
1.0(25.4)
MIN.
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
* Lead: Axial leads, solderable per MIL-STD-202,
method 208 guranteed
* Polarity: Color band denotes cathode end
* Mounting position: Any
* Weight: 0.34 grams
.205(5.2)
.166(4.2)
.034(.9)
.028(.7)
DIA.
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375"(9.5mm) Lead Length at Ta=55 C
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Instantaneous Forward Voltage at 1.0A
Maximum DC Reverse Current
Ta=25 C
at Rated DC Blocking Voltage
Ta=100 C
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range T
J
, T
STG
NOTES:
1N4933G
50
35
50
1N4934G
100
70
100
1N4935G
200
140
200
1.0
30
1.2
5.0
100
200
15
-65 +175
1N4936G
400
280
400
1N4937G UNITS
V
600
V
420
V
600
A
A
V
µA
µA
nS
pF
C
1. Reverse Recovery Time test condition:IF=1.0A, VR=30V.
2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
192

1N4936G Related Products

1N4936G 1N4933G 1N4934G 1N4935G 1N4937G
Description 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 SIGNAL DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41 1 A, 200 V, SILICON, SIGNAL DIODE, DO-41 SIGNAL DIODE

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