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JANTXV1N6132

Description
T MET BI 500W 120V
CategoryDiscrete semiconductor    diode   
File Size372KB,3 Pages
ManufacturerSEMTECH
Websitehttp://www.semtech.com
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T MET BI 500W 120V

JANTXV1N6132 Parametric

Parameter NameAttribute value
MakerSEMTECH
package instructionHERMETIC SEALED PACKAGE-2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW IMPEDANCE
Minimum breakdown voltage108 V
Breakdown voltage nominal value120 V
Shell connectionISOLATED
Maximum clamping voltage173.355 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-MALF-W2
Maximum non-repetitive peak reverse power dissipation500 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Package body materialMETAL
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation1.5 W
Certification statusQualified
GuidelineMIL-19500/516
Maximum repetitive peak reverse voltage91.2 V
Maximum reverse current1 µA
surface mountNO
technologyZENER
Terminal formWIRE
Terminal locationAXIAL

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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