DS2762
High-Precision Li+ Battery Monitor With Alerts
www.maxim-ic.com
GENERAL DESCRIPTION
The DS2762 high-precision Li+ battery monitor is a
data-acquisition, information-storage, and safety-
protection device tailored for cost-sensitive battery
pack applications. This low-power device integrates
precise
temperature,
voltage,
and
current
measurement, nonvolatile (NV) data storage, and Li+
protection into the small footprint of either a TSSOP
package or flip-chip package. The DS2762 is a key
component in applications including remaining
capacity estimation, safety monitoring, and battery-
specific data storage.
§
FEATURES
Li+ Safety Circuit
Overvoltage Protection
Overcurrent/Short-Circuit Protection
Undervoltage Protection
Host Alerted When Accumulated Current or
Temperature Exceeds User-Selectable Limits
0V Battery Recovery Charge
Available in Two Configurations:
Internal 25mW Sense Resistor
External User-Selectable Sense Resistor
Current Measurement
12-Bit Bidirectional Measurement
Internal Sense Resistor Configuration:
0.625mA LSB and ±1.9A Dynamic Range
External Sense Resistor Configuration:
15.625mV LSB and ±64mV Dynamic Range
Current Accumulation:
Internal Sense Resistor: 0.25mAhr LSB
External Sense Resistor: 6.25mVhr LSB
Voltage Measurement with 4.88mV Resolution
Temperature Measurement Using Integrated
Sensor with 0.125°C Resolution
System Power Management and Control
Feature Support
32 Bytes of Lockable EEPROM
16 Bytes of General-Purpose SRAM
®
Dallas 1-Wire Interface with Unique 64-Bit
Device Address
Low-Power Consumption:
Active Current: 60mA typ, 90mA max
Sleep Current: 1mA typ, 2mA max
§
§
§
PIN CONFIGURATIONS
TOP VIEW
CC
PLS
DC
SNS
SNS
SNS
DQ
IS2
1
2
3
2
4
5
6
7
8
16
15
14
13
12
11
10
9
V
IN
V
DD
PIO
V
SS
V
SS
V
SS
PS
IS1
§
§
§
§
§
§
§
§
TSSOP
1
2
3
SNS
PLS
DC
CC
V
IN
V
DD
SNS
PROBE
V
SS
PROBE
4
A
DQ
IS2
IS1
PS
B
C
D
E
F
§
APPLICATIONS
PDAs
Cell Phones/Smartphones
Digital Cameras
PIO
V
SS
FLIP CHIP
(top view – bumps on bottom)
ORDERING INFORMATION
PART
DS2762BE+
TEMP RANGE
-20°C to +70°C
PIN-PACKAGE
16 TSSOP
1-Wire is registered trademark of Dallas Semiconductor.
Selector Guide appears at end of data sheet, for additional
options.
Note:
Some revisions of this device may incorporate deviations from published specifications known as errata. Multiple revisions of any device
may be simultaneously available through various sales channels. For information about device errata, click here:
www.maxim-ic.com/errata.
1 of 25
REV: 010906
DS2762 High-Precision Li+ Battery Monitor With Alerts
ABSOLUTE MAXIMUM RATINGS
Voltage Range on PLS and
CC
Pin, Relative to V
SS
Voltage Range on PIO Pin, Relative to V
SS
Voltage Range on Any Other Pin, Relative to V
SS
Continuous Internal Sense Resistor Current
Pulsed Internal Sense Resistor Current
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
-0.3V to +18V
-0.3V to +12V
-0.3V to +6V
±2.5A
±50A
for <100µs/s, <1000 pulses
-40°C to +85°C
-55°C to +125°C
See IPC/JEDEC J-STD-020A Specification
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only,
and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is
not implied. Exposure to the absolute maximum rating conditions for extended periods may affect device.
RECOMMENDED DC OPERATING CONDITIONS
(2.5V
£
V
DD
£
5.5V, T
A
= -20°C to +70°C.)
PARAMETER
Supply Voltage
Data Pin
SYMBOL
V
DD
DQ
(Note 1)
(Note 1)
CONDITIONS
MIN
2.5
-0.3
TYP
MAX
5.5
+5.5
UNITS
V
V
DC ELECTRICAL CHARACTERISTICS
(2.5V
£
V
DD
£
5.5V, T
A
= -20°C to +70°C.)
PARAMETER
Active Current
Sleep Mode Current
Input Logic High: DQ, PIO
Input Logic High:
PS
Input Logic Low: DQ, PIO
Input Logic Low:
PS
Output Logic High:
CC
Output Logic High:
DC
Output Logic Low:
CC, DC
Output Logic Low: DQ, PIO
DQ Pulldown Current
Input Resistance: V
IN
Internal Current-Sense Resistor
DQ Low to Sleep time
SYMBOL
I
ACTIVE
I
SLEEP
V
IH
V
IH
V
IL
V
IL
V
OH
V
OH
V
OL
V
OL
I
PD
R
IN
R
SNS
t
SLEEP
+25°C
5
20
2.1
25
30
CONDITIONS
DQ = V
DD
, normal operation
DQ = 0V, no activity,
PS
floating
(Note 1)
(Note 1)
(Note 1)
(Note 1)
I
OH
= -0.1mA (Note 1)
I
OH
= -0.1mA (Note 1)
I
OL
= 0.1mA (Note 1)
I
OL
= 4mA (Note 1)
1
V
PLS
- 0.4V
V
DD
- 0.4V
0.4
0.4
1.5
V
DD
- 0.2V
0.4
0.2
MIN
TYP
60
1
MAX
90
2
UNITS
mA
mA
V
V
V
V
V
V
V
V
mA
MW
mW
s
2 of 25
DS2762 High-Precision Li+ Battery Monitor With Alerts
ELECTRICAL CHARACTERISTICS: PROTECTION CIRCUITRY
(2.5V
£
V
DD
£
5.5V, T
A
= 0°C to +50°C.)
PARAMETER
Overvoltage Detect
Charge Enable
Undervoltage Detect
Overcurrent Detect
Overcurrent Detect
Short-Circuit Detect
Short-Circuit Detect
Overvoltage Delay
Undervoltage Delay
Overcurrent Delay
Short-Circuit Delay
Test Threshold
Test Current
Recovery Charge Current
SYMBOL
V
OV
V
CE
V
UV
I
OC
V
OC
I
SC
V
SC
t
OVD
t
UVD
t
OCD
t
SCD
V
TP
I
TST
I
RC
(Note 5)
CONDITIONS
(Notes 1, 2)
(Note 1)
(Note 1)
(Note 3)
(Note 1, 4)
(Note 3)
(Note 1)
MIN
4.325
4.250
4.10
2.5
1.8
45
5.0
150
0.8
90
5
160
0.5
10
0.5
TYP
4.350
4.275
4.15
2.6
1.9
47.5
8.0
200
1
100
10
200
1.0
20
1
MAX
4.375
4.300
4.20
2.7
2.0
50
11
250
1.2
110
20
240
1.5
40
2
UNITS
V
V
V
A
mV
A
mV
s
ms
ms
ms
V
mA
mA
3 of 25
DS2762 High-Precision Li+ Battery Monitor With Alerts
ELECTRICAL CHARACTERISTICS: TEMPERATURE, VOLTAGE, CURRENT
(2.5V
£
V
DD
£
5.5V, T
A
= -20°C to +50°C.)
PARAMETER
Temperature Resolution
Temperature Full-Scale Magnitude
Temperature Error
Voltage Resolution
Voltage Full-Scale Magnitude
Voltage Offset Error
Voltage Gain Error
Current Resolution
SYMBOL
T
LSB
T
FS
T
ERR
V
LSB
V
FS
V
OERR
V
GERR
I
LSB
(Note 3)
(Note 4)
(Notes 3, 4)
(Note 8)
(Note 9)
(Notes 3, 10, 14)
(Note 4)
(Note 3)
(Note 4)
0.25
6.25
1456
(Note 11)
(Note 11)
±1
±3
±6.5
1.9
0.625
15.625
2.56
64
1
3
1
(Note 7)
4.75
1
5
(Note 6)
4.88
127
±3
CONDITIONS
MIN
TYP
0.125
MAX
UNITS
°C
°C
°C
mV
V
LSB
%
mA
mV
A
mV
LSB
%
mAhr
µVhr
Hz
%
%
Current Full-Scale Magnitude
Current Offset Error
Current Gain Error
I
FS
I
OERR
I
GERR
Accumulated Current Resolution
Current Sampling Frequency
Internal Timebase Accuracy
q
CA
f
SAMP
t
ERR1
t
ERR2
EEPROM RELIABILITY SPECIFICATION
(2.5V
£
V
DD
£
5.5V, T
A
= -20°C to +70°C.)
PARAMETER
Copy to EEPROM Time
EEPROM Copy Endurance
SYMBOL
t
EEC
N
EEC
(Note 12)
25,000
CONDITIONS
MIN
TYP
2
MAX
10
UNITS
ms
cycles
4 of 25
DS2762 High-Precision Li+ Battery Monitor With Alerts
ELECTRICAL CHARACTERISTICS: 1-WIRE INTERFACE
(2.5V
£
V
DD
£
5.5V, T
A
= -20°C to +70°C.)
PARAMETER
Time Slot
Recovery Time
Write 0 Low Time
Write 1 Low Time
Read Data Valid
Reset Time High
Reset Time Low
Presence Detect High
Presence Detect Low
SWAP Timing Pulse Width
SWAP Timing Pulse Falling Edge to
DC
Release
SWAP Timing Pulse Rising Edge to
DC
Engage
DQ Capacitance
Note 1:
Note 2:
Note 3:
Note 4:
Note 5:
Note 6:
Note 7:
Note 8:
All voltages are referenced to V
SS
.
See the
Selector Guide
section to determine the corresponding part number for each V
OV
value.
Internal current-sense resistor configuration.
External current-sense resistor configuration.
Test conditions are PLS = 4.1V, V
DD
= 2.5V. Maximum current for conditions of PLS = 15V, V
DD
= 0V is 10mA.
Self-heating due to output pin loading and sense resistor power dissipation can alter the reading from ambient conditions.
Voltage offset measurement is with respect to V
OV
at +25°C.
The current register supports measurement magnitudes up to 2.56A using the internal sense resistor option and 64mV with the
external resistor option. Compensation of the internal sense resistor value for process and temperature variation can reduce the
maximum reportable magnitude to 1.9A.
Current offset error null to ±1LSB typically requires 3.5s in-system calibration by user.
Current gain error specification applies to gain error in converting the voltage difference at IS1 and IS2, and excludes any error
remaining after the DS2762 compensates for the internal sense resistor’s temperature coefficient of 3700ppm/°C to an accuracy
of
±500ppm/°C.
The DS2762 does not compensate for external sense resistor characteristics, and any error terms arising from
the use of an external sense resistor should be taken into account when calculating total current measurement error.
Typical value for t
ERR1
is specified at 3.6V and +25°C, max value is specified for 0°C to +50°C. Max value for t
ERR2
is specified
for -20°C to +70°C.
Four-year data retention at +70°C.
Typical load capacitance on
DC
and
CC
is 1000pF.
Error at time of shipment from Dallas Semiconductor is 3% max. Board mounting processes may cause the current gain error
to widen to as much as 10% for devices with the internal sense resistor option. Contact factory for on-board recalibration
procedure for devices with the internal sense resistor option to improve accuracy.
SYMBOL
t
SLOT
t
REC
t
LOW0
t
LOW1
t
RDV
t
RSTH
t
RSTL
t
PDH
t
PDL
t
SWL
t
SWOFF
t
SWON
C
DQ
CONDITIONS
MIN
60
1
60
1
TYP
MAX
120
UNITS
ms
ms
120
15
15
ms
ms
ms
ms
480
480
15
60
0.2
(Note 13)
(Note 13)
0
0
960
60
240
120
1
1
60
ms
ms
ms
ms
ms
ms
pF
Note 9:
Note 10:
Note 11:
Note 12:
Note 13:
Note 14:
5 of 25
京公网安备 11010802033920号
EEWORLD
