MB85RS1MTPH-G-JNE1 datasheet, PDF - EEWORLD Datasheet

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MB85RS1MTPH-G-JNE1: DescriptionIC FRAM 1M SPI 40MHZ 8DIP; Categorystorage; ManufacturerFujitsu America

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MB85RS1MTPH-G-JNE1 Overview

IC FRAM 1M SPI 40MHZ 8DIP

MB85RS1MTPH-G-JNE1 Parametric

Parameter Name	Attribute value
memory type	non-volatile
memory format	FRAM
technology	FRAM (ferroelectric RAM)
storage	1Mb （128K x 8）
Clock frequency	40MHz
Write cycle time - words, pages	-
memory interface	SPI
Voltage - Power	1.8 V ~ 3.6 V
Operating temperature	-40°C ~ 85°C（TA）
Installation type	Through hole
Package/casing	8-DIP（0.300"，7.62mm）
Supplier device packaging	8-DIP

MB85RS1MTPH-G-JNE1 Related Products

	MB85RS1MTPH-G-JNE1
Description	IC FRAM 1M SPI 40MHZ 8DIP
memory type	non-volatile
memory format	FRAM
technology	FRAM (ferroelectric RAM)
storage	1Mb （128K x 8）
Clock frequency	40MHz
memory interface	SPI
Voltage - Power	1.8 V ~ 3.6 V
Operating temperature	-40°C ~ 85°C（TA）
Installation type	Through hole
Package/casing	8-DIP（0.300"，7.62mm）
Supplier device packaging	8-DIP

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