S1G-E3/1 datasheet, PDF - EEWORLD Datasheet

S1G-E3/1: DescriptionDIODE GEN PURP 400V 1A DO214AC; Categorysemiconductor Discrete semiconductor; File Size205KB，7 Pages; ManufacturerVishay; Websitehttp://www.vishay.com; Environmental Compliance

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S1G-E3/1 Overview

DIODE GEN PURP 400V 1A DO214AC

Parameter Name	Attribute value
Diode type	standard
Voltage - DC Reverse (Vr) (Maximum)	400V
Current - average rectification (Io)	1A
Voltage at different If - Forward (Vf	1.1V @ 1A
speed	Standard recovery >500ns, >200mA (Io)
Reverse recovery time (trr)	1.8µs
Current at different Vr - Reverse leakage current	1µA @ 400V
Capacitance at different Vr, F	12pF @ 4V，1MHz
Installation type	surface mount
Package/casing	DO-214AC，SMA
Supplier device packaging	DO-214AC（SMA）
Operating Temperature - Junction	-55°C ~ 150°C

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