IPI100N06S3L-03 datasheet, PDF

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IPI100N06S3L-03: Description100A, 55V, 0.0046ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, GREEN, TO-262, 3 PIN; CategoryThe transistor; File Size874KB，10 Pages; ManufacturerRochester Electronics; Websitehttps://www.rocelec.com/; Environmental Compliance

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IPI100N06S3L-03 Overview

100A, 55V, 0.0046ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, GREEN, TO-262, 3 PIN

IPI100N06S3L-03 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Rochester Electronics
Parts packaging code	TO-262AA
package instruction	GREEN, TO-262, 3 PIN
Contacts	3
Reach Compliance Code	unknown
Is Samacsys	N
Other features	LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)	690 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	55 V
Maximum drain current (ID)	100 A
Maximum drain-source on-resistance	0.0046 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-262AA
JESD-30 code	R-PSIP-T3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	400 A
Certification status	COMMERCIAL
surface mount	NO
Terminal surface	MATTE TIN
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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IPI100N06S3L-03 Related Products

	IPI100N06S3L-03	IPB100N06S3L-03
Description	100A, 55V, 0.0046ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, GREEN, TO-262, 3 PIN	100A, 55V, 0.0043ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263, GREEN, TO-263, 3 PIN
Is it lead-free?	Lead free	Lead free
Is it Rohs certified?	conform to	conform to
Parts packaging code	TO-262AA	D2PAK
package instruction	GREEN, TO-262, 3 PIN	GREEN, TO-263, 3 PIN
Contacts	3	4
Reach Compliance Code	unknown	unknown
Other features	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)	690 mJ	690 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	55 V	55 V
Maximum drain current (ID)	100 A	100 A
Maximum drain-source on-resistance	0.0046 Ω	0.0043 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-262AA	TO-263
JESD-30 code	R-PSIP-T3	R-PSSO-G2
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	3	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	400 A	400 A
Certification status	COMMERCIAL	COMMERCIAL
surface mount	NO	YES
Terminal surface	MATTE TIN	MATTE TIN
Terminal form	THROUGH-HOLE	GULL WING
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	40	40
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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