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RFN3BM6STL

Description
DIODE GEN PURP 600V 3A TO252
Categorysemiconductor    Discrete semiconductor   
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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RFN3BM6STL Overview

DIODE GEN PURP 600V 3A TO252

RFN3BM6STL Parametric

Parameter NameAttribute value
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)600V
Current - average rectification (Io)3A
Voltage at different If - Forward (Vf1.55V @ 3A
speedStandard recovery >500ns, >200mA (Io)
Reverse recovery time (trr)30ns
Current at different Vr - Reverse leakage current10µA @ 600V
Capacitance at different Vr, F-
Installation typesurface mount
Package/casingTO-252-3, DPak (2 leads + tab), SC-63
Supplier device packagingTO-252
Operating Temperature - Junction150°C (maximum)
Super Fast Recovery Diode
RFN3BM6S
lSeries
Standard Fast Recovery
lDimensions
(Unit : mm)
Data
Sheet
lLand
Size Figure
(Unit : mm)
6.0
General rectification
1
TO-252
2.3 2.3
Cathode
lFeatures
1) Low switching loss
2) Low forward voltage
ROHM : TO-252
JEITA : SC-63
1
lStructure
: Manufacture Date
Open
φ
1.55±0.1
f1.550.1
      0
3.0 2.0
Anode
0.4±0.1
lApplication
1.6
1.6
lConstruction
Silicon epitaxial planar type
lTaping
Dimensions
(Unit : mm)
4.0±0.1
2.0±0.05
8.0±0.1
7.5±0.05
2.5±0.1
10.1±0.1
6.8±0.1
8.0±0.1
φ
3.0±0.1
f3.00.1
0½0.5
13.5±0.2
10.1±0.1
2.7±0.2
TL
lAbsolute
Maximum Ratings
(T
c
= 25°C)
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average rectified foward current
Forward current surge peak
Operating junction temperature
Storage temperature
Symbol
V
RM
V
R
I
o
I
FSM
T
j
T
stg
Conditions
Duty≦0.5
Direct voltage
60Hz half sin wave , Resistive load
T
c
=112°C
Limits
600
600
3
20
150
-55
to
+150
16.0±0.2
6.0
Unit
V
V
A
A
°C
°C
60Hz half sin wave ,Non-repetitive at T
j
=25°C
-
-
lElectrical
Characteristics
(T
j
= 25°C)
Parameter
Forward voltage
Reverse current
Reverse recovery time
Thermal resistance
Symbol
V
F
I
R
trr
R
th(j-c)
Conditions
I
F
=3A
V
R
=600V
I
F
=0.5A, I
R
=1A, Irr=0.25×I
R
Junction to case
Min.
-
-
-
-
Typ. Max. Unit
1.35 1.55
0.05
18
-
10
30
V
mA
ns
6.0
°C / W
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/4
2016.02 - Rev.C

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