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RJH1CF6RDPQ-80#T2

Description
IGBT 1200V 55A 227.2W TO247
Categorysemiconductor    Discrete semiconductor   
File Size99KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
Download Datasheet Parametric View All

RJH1CF6RDPQ-80#T2 Overview

IGBT 1200V 55A 227.2W TO247

RJH1CF6RDPQ-80#T2 Parametric

Parameter NameAttribute value
IGBT type-
Voltage - collector-emitter breakdown (maximum)1200V
Current - Collector (Ic) (Maximum)55A
Vce(on) when different Vge,Ic2.3V @ 15V,30A
Power - Max227.2W
switching energy-
input typestandard
Td (on/off) value at 25°C-
Test Conditions-
Operating temperature150°C(TJ)
Installation typeThrough hole
Package/casingTO-247-3
Supplier device packagingTO-247-3
Preliminary
Datasheet
RJH1CF6RDPQ-80
Silicon N Channel IGBT
High Speed Power Switching
Features
Voltage resonance circuit use
Reverse conducting IGBT with monolithic body diode
High efficiency device for induction heating
Low collector to emitter saturation voltage
V
CE(sat)
= 1.8 V typ. (at I
C
= 30 A, V
GE
= 15V, Tj = 25°C)
Gate to emitter voltage rating
±30
V
Pb-free lead plating
R07DS0356EJ0100
Rev.1.00
May 12, 2010
Outline
RENESAS Package code: PRSS0003ZE-A
(Package name: TO-247)
C
4
G
1. Gate
2. Collector
3. Emitter
4. Collector
E
1 2
3
Absolute Maximum Ratings
(Tc = 25°C)
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
Symbol
V
CES
V
GES
I
C
I
C
ic(peak)
Note1
i
DF
P
C
θj-c
Tj
Tstg
Ratings
1200
±30
55
30
100
20
227.2
0.55
150
–55 to +150
Unit
V
V
A
A
A
A
W
°C/W
°C
°C
R07DS0356EJ0100 Rev.1.00
May 12, 2010
Page 1 of 6
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