2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP07
SST12LP072.4 GHz High Gain High Power PA
Preliminary Specifications
FEATURES:
•
High Gain:
– Typically 29 dB gain across 2.4–2.5 GHz over
temperature 0°C to +85°C
High linear output power:
– >26 dBm P1dB
- Please refer to “Absolute Maximum Stress
Ratings” on page 4
– Meets 802.11g OFDM ACPR requirement up to
22 dBm
– ~2.5% added EVM up to 19 dBm for
54 Mbps 802.11g signal
– Meets 802.11b ACPR requirement up to 22 dBm
High power-added efficiency/Low operating
current for both 802.11g/b applications
– ~22%/220 mA @ P
OUT
= 22 dBm for 802.11g
– ~21%/230 mA @ P
OUT
= 22 dBm for 802.11b
Single-pin low I
REF
power-up/down control
– I
REF
<2 mA
Low idle current
– ~70 mA I
CQ
High-speed power-up/down
– Turn on/off time (10%- 90%) <100 ns
– Typical power-up/down delay with driver delay
included <200 ns
• High temperature stability
– ~1 dB gain/power variation between 0°C to +85°C
• Low shut-down current (< 0.1 µA)
• Excellent On-chip power detection
– <+/- 0.3dB variation between 0°C to +85°C
– <+/- 0.4dB variation with 2:1 VSWR mismatch
– <+/- 0.3dB variation Ch1 through Ch14
• 20 dB dynamic range on-chip power detection
• Simple input/output matching
• Packages available
– 16-contact VQFN – 3mm x 3mm
• All non-Pb (lead-free) devices are RoHS compliant
•
•
•
•
•
APPLICATIONS:
•
•
•
•
WLAN (IEEE 802.11g/b)
Home RF
Cordless phones
2.4 GHz ISM wireless equipment
PRODUCT DESCRIPTION
The SST12LP07 is a versatile power amplifier based on
the highly-reliable InGaP/GaAs HBT technology.
The SST12LP07 can be easily configured for high-power
applications with good power-added efficiency while oper-
ating over the 2.4- 2.5 GHz frequency band. This device
typically provides 29 dB gain with 22% power-added effi-
ciency @ P
OUT
= 22 dBm for 802.11g and 21% power-
added efficiency @ P
OUT
= 22 dBm for 802.11b.
The SST12LP07 has excellent linearity, typically ~2.5%
added EVM at 19 dBm output power which is essential for
54 Mbps 802.11g/n operation while meeting 802.11g spec-
trum mask at 22 dBm. The SST12LP07 can also be config-
ured for high-efficiency operation, typically 17 dBm linear 54
Mbps 802.11g output power at 85 mA total power con-
sumption. High-efficiency operation is desirable in embed-
ded applications such as in hand-held units.
The SST12LP07 also features easy board-level usage
along with high-speed power-up/down control through a
single combined reference voltage pin. Ultra-low reference
current (total I
REF
~2 mA) makes the SST12LP07 controlla-
©2006 Silicon Storage Technology, Inc.
S71321-00-000
5/06
1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
ble by an on/off switching signal directly from the baseband
chip. These features coupled with low operating current
make the SST12LP07 ideal for the final stage power ampli-
fication in battery-powered 802.11g/b WLAN transmitter
applications.
The SST12LP07 has an excellent on-chip, single-ended
power detector, which features wide-range (~20 dB) with
dB-wise linearization and high stability over temperature (<
+/-0.3 dB 0°C to +85°C), frequency (<+/-0.3 dB across
Channels 1 through 14), and output load (<+/-0.4 dB
with 2:1 output VSWR all phases). The excellent on-
chip power detector provides a reliable solution to
board-level power control.
The SST12LP07 is offered in a 16-contact VQFN package.
See Figure 2 for pin assignments and Table 1 for pin
descriptions.
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP07
Preliminary Specifications
ELECTRICAL SPECIFICATIONS
The AC and DC specifications for the power amplifier interface signals. Refer to Table 2 for the DC voltage and current spec-
ifications. Refer to Figures 3 through 11 for the RF performance.
Absolute Maximum Stress Ratings
(Applied conditions greater than those listed under “Absolute Maximum
Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these conditions or conditions greater than those defined in the operational sections of this data
sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)
Input power to pin 2 (P
IN
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5 dBm
Average output power (P
OUT
)
1
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +26 dBm
Supply Voltage at pins 13, 14, and 16 (V
CC
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +4.0V
Reference voltage to pin 4 (V
REF
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +3.3V
DC supply current (I
CC
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 mA
Operating Temperature (T
A
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +85ºC
Storage Temperature (T
STG
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +120ºC
Maximum Junction Temperature (T
J
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150ºC
Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds
1. Never measure with CW source. Pulsed single-tone source with <50% duty cycle is recommended. Exceeding the maximum rating
of average output power could cause permanent damage to the device.
Operating Range
Range
Industrial
Ambient Temp
-40°C to +85°C
V
CC
3.3V
TABLE 2: DC Electrical Characteristics
Symbol
V
CC
I
CC
Supply Current
for 802.11g, 22 dBm
for 802.11b, 22 dBm
I
CQ
I
OFF
V
REG
Idle current for 802.11g to meet EVM <2.5% @ 19 dBm
Shut down current
Reference Voltage for, with 110Ω resistor
2.75
2.85
220
230
70
0.1
2.95
mA
mA
mA
µA
V
T2.0 1321
Parameter
Supply Voltage at pins 13, 14, 16
Min.
3.0
Typ
3.3
Max.
3.6
Unit
V
Test Conditions
©2006 Silicon Storage Technology, Inc.
S71321-00-000
5/06
4
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP07
Preliminary Specifications
TABLE 3: AC Electrical Characteristics for Configuration
Symbol
F
L-U
P
OUT
Parameter
Frequency range
Output power
@ PIN = -6 dBm 11b signals
@ PIN = -7 dBm 11g signals
G
G
VAR1
G
VAR2
ACPR
Added EVM
2f, 3f, 4f, 5f
Small signal gain
Gain variation over band (2400~2485 MHz)
Gain ripple over channel (20 MHz)
Meet 11b spectrum mask
Meet 11g OFDM 54 Mbps spectrum mask
@ 19 dBm output with 11g OFDM 54 Mbps signal
Harmonics at 22 dBm, without external filters
22
22
2.5
-40
0.2
22
21
28
29
±0.5
dBm
dBm
dB
dB
dB
dBm
dBm
%
dBc
T3.2 1321
Min.
2400
Typ
Max.
2485
Unit
MHz
©2006 Silicon Storage Technology, Inc.
S71321-00-000
5/06
5
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