MCR69−2, MCR69−3
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed for overvoltage protection in crowbar circuits.
Features
•
Glass-Passivated Junctions for Greater Parameter Stability and
•
•
•
•
Reliability
Center-Gate Geometry for Uniform Current Spreading Enabling
High Discharge Current
Small Rugged, Thermowatt Package Constructed for Low Thermal
Resistance and Maximum Power Dissipation and Durability
High Capacitor Discharge Current, 750 Amps
Pb−Free Packages are Available*
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SCRs
25 AMPERES RMS
50 thru 100 VOLTS
G
A
K
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Peak Repetitive Off−State Voltage (Note 1)
(T
J
=
*40
to +125°C, Gate Open)
MCR69−2
MCR69−3
Peak Discharge Current (Note 2)
On-State RMS Current
(180° Conduction Angles; T
C
= 85°C)
Average On-State Current
(180° Conduction Angles; T
C
= 85°C)
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz, T
J
= 125°C)
Circuit Fusing Considerations (t = 8.3 ms)
Forward Peak Gate Current
(t
≤
1.0
ms,
T
C
= 85°C)
Forward Peak Gate Power
(t
≤
1.0
ms,
T
C
= 85°C)
Forward Average Gate Power
(t = 8.3 ms, T
C
= 85°C)
Operating Junction Temperature Range
Storage Temperature Range
Mounting Torque
Symbol
V
DRM,
V
RRM
50
100
I
TM
I
T(RMS)
I
T(AV)
I
TSM
I
2
t
I
GM
P
GM
P
G(AV)
T
J
T
stg
−
750
25
16
300
375
2.0
20
0.5
−40 to +125
−40 to +150
8.0
A
A
A
A
A
2
s
A
W
1
TO−220AB
CASE 221A
STYLE 3
2
3
A
= Assembly Location
Y
= Year
WW
= Work Week
MCR69 = Device Code
x
= 2 or 3
AKA
= Location Code
AYWW
MCR69x
AKA
Value
Unit
V
4
MARKING
DIAGRAM
PIN ASSIGNMENT
W
°C
°C
in. lb.
1
2
3
4
Cathode
Anode
Gate
Anode
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2. Ratings apply for t
w
= 1 ms. See Figure 1 for I
TM
capability for various
duration of an exponentially decaying current waveform, t
w
is defined as
5 time constants of an exponentially decaying current pulse.
3. Test Conditions: I
G
= 150 mA, V
D
= Rated V
DRM
, I
TM
= Rated Value, T
J
= 125°C.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2004
ORDERING INFORMATION
Device
MCR69−2
MCR69−2G
MCR69−3
MCR69−3G
Package
TO220AB
TO220AB
(Pb−Free)
TO220AB
TO220AB
(Pb−Free)
Shipping
†
500/Box
500/Box
500/Box
500/Box
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
December, 2004 − Rev. 1
Publication Order Number:
MCR69/D
MCR69−2, MCR69−3
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes 1/8 in from Case for 10 Seconds
Symbol
R
qJC
R
qJA
T
L
Max
1.5
60
260
Unit
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(V
AK
= Rated V
DRM
or V
RRM
, Gate Open)
I
DRM
, I
RRM
T
J
= 25°C
T
J
= 125°C
−
−
−
−
10
2.0
mA
mA
ON CHARACTERISTICS
Peak Forward On-State Voltage
(I
TM
= 50 A) (Note 4)
(I
TM
= 750 A, t
w
= 1 ms) (Note 5)
Gate Trigger Current (Continuous dc)
(V
D
= 12 V, R
L
= 100
W)
Gate Trigger Voltage (Continuous dc)
(V
D
= 12 V, R
L
= 100
W)
Gate Non−Trigger Voltage
(V
D
= 12 Vdc, R
L
= 100
W,
T
J
= 125°C)
Holding Current
(V
D
= 12 V, Initiating Current = 200 mA, Gate Open)
Latching Current
(V
D
= 12 Vdc, I
G
= 150 mA)
Gate Controlled Turn-On Time (Note 6)
(V
D
= Rated V
DRM
, I
G
= 150 mA)
(I
TM
= 50 A Peak)
V
TM
−
−
I
GT
V
GT
V
GD
I
H
I
L
t
gt
2.0
−
0.2
3.0
−
−
−
6.0
7.0
0.65
0.40
15
−
1.0
1.8
−
30
1.5
−
50
60
−
mA
V
V
mA
mA
ms
V
DYNAMIC CHARACTERISTICS
Critical Rate-of-Rise of Off-State Voltage
(V
D
= Rated V
DRM
, Gate Open, Exponential Waveform, T
J
= 125°C)
Critical Rate-of-Rise of On-State Current
I
G
= 150 mA
T
J
= 125°C
dv/dt
di/dt
10
−
−
−
−
100
V/ms
A/ms
4. Pulse duration
p
300
ms,
duty cycle
p
2%.
5. Ratings apply for t
w
= 1 ms. See Figure 1 for I
TM
capability for various durations of an exponentially decaying current waveform. t
w
is defined
as 5 time constants of an exponentially decaying current pulse.
6. The gate controlled turn-on time in a crowbar circuit will be influenced by the circuit inductance.
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2
MCR69−2, MCR69−3
Voltage Current Characteristic of SCR
+ Current
Anode +
V
TM
on state
I
RRM
at V
RRM
I
H
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode −
+ Voltage
I
DRM
at V
DRM
Forward Blocking Region
(off state)
I TM , PEAK DISCHARGE CURRENT (AMPS)
NORMALIZED PEAK CURRENT
1000
300
200
100
50
20
0.5
I
TM
t
w
t
w
= 5 time constants
1.0
2.0
5.0
10
20
50
1.0
0.8
0.6
0.4
0.2
0
25
50
75
100
125
T
C
, CASE TEMPERATURE (°C)
t
w
, PULSE CURRENT DURATION (ms)
Figure 1. Peak Capacitor Discharge Current
Figure 2. Peak Capacitor Discharge Current
Derating
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (
°
C)
125
120
115
110
dc
P(AV) , AVERAGE POWER DISSIPATION (WATTS)
32
Half Wave
24
dc
105
100
95
90
85
80
75
4.0
8.0
12
16
Half Wave
8.0
T
J
= 125°C
0
16
20
0
4.0
8.0
12
16
20
I
T(AV)
, AVERAGE ON-STATE CURRENT (AMPS)
I
T(AV)
, AVERAGE ON-STATE CURRENT (AMPS)
Figure 3. Current Derating
Figure 4. Maximum Power Dissipation
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3
MCR69−2, MCR69−3
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.2
0.3
0.5
1
2
3
5
10
20
30
50
100
200 300
500
1k
2k 3k
5k
10 k
Z
qJC(t)
= R
qJC
•
r(t)
t, TIME (ms)
Figure 5. Thermal Response
10
NORMALIZED GATE TRIGGER CURRENT
NORMALIZED GATE TRIGGER VOLTAGE
5.0
3.0
2.0
1.0
0.5
0.3
0.2
−60
−40
−20
0
20
40
60
80 100
T
J
, JUNCTION TEMPERATURE (°C)
120
140
1.4
V
D
= 12 Volts
R
L
= 100
W
V
D
= 12 Volts
R
L
= 100
W
1.2
1.0
0.8
0.5
−60
−40
−20
0
20
40
60
80
100
120
140
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Gate Trigger Current
Figure 7. Gate Trigger Voltage
3.0
NORMALIZED HOLD CURRENT
2.0
V
D
= 12 Volts
I
TM
= 100 mA
1.0
0.8
0.5
0.3
−60
−40
−20
0
20
40
60
80
100
120
140
T
J
, JUNCTION TEMPERATURE (°C)
Figure 8. Holding Current
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4
MCR69−2, MCR69−3
PACKAGE DIMENSIONS
TO−220AB
CASE 221A−07
ISSUE AA
B
F
C
−T−
SEATING
PLANE
4
T
A
Q
1 2 3
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.014
0.022
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
−−−
−−−
0.080
CATHODE
ANODE
GATE
ANODE
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.36
0.55
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
−−−
−−−
2.04
H
K
Z
L
V
G
D
N
J
R
U
STYLE 3:
PIN 1.
2.
3.
4.
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