MT47H64M8CB-5E:B datasheet, PDF

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MT47H64M8CB-5E:B: DescriptionIC DRAM 512M PARALLEL 60FBGA; Categorystorage storage; File Size9MB，139 Pages; ManufacturerMicron Technology; Websitehttp://www.mdtic.com.tw/; Environmental Compliance

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MT47H64M8CB-5E:B Overview

IC DRAM 512M PARALLEL 60FBGA

MT47H64M8CB-5E:B Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Micron Technology
Parts packaging code	BGA
package instruction	TFBGA, BGA60,9X11,32
Contacts	60
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	0.6 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	200 MHz
I/O type	COMMON
interleaved burst length	4,8
JESD-30 code	R-PBGA-B60
JESD-609 code	e1
length	12 mm
memory density	536870912 bit
Memory IC Type	DDR DRAM
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	60
word count	67108864 words
character code	64000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature
organize	64MX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Encapsulate equivalent code	BGA60,9X11,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	260
power supply	1.8 V
Certification status	Not Qualified
refresh cycle	8192
Maximum seat height	1.2 mm
self refresh	YES
Continuous burst length	4,8
Maximum standby current	0.007 A
Maximum slew rate	0.22 mA
Maximum supply voltage (Vsup)	1.9 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	30
width	10 mm

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512Mb: x4, x8, x16 DDR2 SDRAM

Features

DDR2 SDRAM

MT47H128M4 – 32 Meg x 4 x 4 banks

MT47H64M8 – 16 Meg x 8 x 4 banks

MT47H32M16 – 8 Meg x 16 x 4 banks

Features

•

Vdd = +1.8V ±0.1V, VddQ = +1.8V ±0.1V

JEDEC-standard 1.8V I/O (SSTL_18-compatible)

Differential data strobe (DQS, DQS#) option

4n-bit prefetch architecture

Duplicate output strobe (RDQS) option for x8

DLL to align DQ and DQS transitions with CK

4 internal banks for concurrent operation

Programmable CAS latency (CL)

Posted CAS additive latency (AL)

WRITE latency = READ latency - 1

Selectable burst lengths: 4 or 8

Adjustable data-output drive strength

64ms, 8,192-cycle refresh

On-die termination (ODT)

Industrial temperature (IT) option

Automotive temperature (AT) option

RoHS compliant

Supports JEDEC clock jitter specification

Options

•

Configuration

–

256 Meg x 4 (32 Meg x 4 x 4 banks)

–

128 Meg x 8 (16 Meg x 8 x 4 banks)

–

64 Meg x 16 (8 Meg x 16 x 4 banks)

•

FBGA package (Pb-free) – x16

–

84-ball FBGA (12mm x 12.5mm) Rev. B

–

84-ball FBGA (10mm x 12.5mm) Rev. D

–

84-ball FBGA (8mm x 12.5mm) Rev. F

•

FBGA package (Pb-free) – x4, x8

–

60-ball FBGA (12mm x 10mm) Rev. B

–

60-ball FBGA (10mm x 10mm) Rev. D

–

60-ball FBGA (8mm x 10mm) Rev. F

•

FBGA package (lead solder) – x16

–

84-ball FBGA (12mm x 12.5mm) Rev. B

–

84-ball FBGA (10mm x 12.5mm) Rev. D

–

84-ball FBGA (8mm x 12.5mm) Rev. F

•

FBGA package (lead solder) – x4, x8

–

60-ball FBGA (12mm x 10mm) Rev. B

–

60-ball FBGA (10mm x 10mm) Rev. D

–

60-ball FBGA (8mm x 10mm) Rev. F

•

Timing – cycle time

–

2.5ns @ CL = 5 (DDR2-800)

–

2.5ns @ CL = 6 (DDR2-800)

–

3.0ns @ CL = 4 (DDR2-667)

–

3.0ns @ CL = 5 (DDR2-667)

–

3.75ns @ CL = 4 (DDR2-533)

–

5.0ns @ CL = 3 (DDR2-400)

•

Self refresh

–

Standard

–

Low-power

•

Operating temperature

–

Commercial (0°C

≤

85°C)

–

Industrial (–40°C

≤

95°C;

–40°C

≤

85°C)

–

Automotive, Revision :D only

(–40°C

≤

, T

≤

105°C)

•

Revision

Note:

Marking

128M4

64M8

32M16

-25E

-25

-3E

-3

-37E

-5E

None

:B/:D/:F

1. Not all options listed can be combined to

define an offered product. Use the Part

Catalog Search on

www.micron.com

for

product offerings and availability.

PDF: 09005aef82f1e6e2

Rev. M 9/08 EN

Products and specifications discussed herein are subject to change by Micron without notice.

Micron Technology, Inc. reserves the right to change products or specifications without notice.

512Mb: x4, x8, x16 DDR2 SDRAM

State Diagram .................................................................................................................................................. 9

Functional Description ................................................................................................................................... 10

Industrial Temperature .............................................................................................................................. 10

Automotive Temperature ........................................................................................................................... 11

General Notes ............................................................................................................................................ 11

Functional Block Diagrams ............................................................................................................................. 12

Ball Assignments and Descriptions ................................................................................................................. 15

Packaging ...................................................................................................................................................... 20

Package Dimensions .................................................................................................................................. 20

FBGA Package Capacitance ......................................................................................................................... 26

Electrical Specifications – Absolute Ratings ..................................................................................................... 27

Temperature and Thermal Impedance ........................................................................................................ 27

Electrical Specifications – Idd Parameters ........................................................................................................ 30

Idd Specifications and Conditions ............................................................................................................... 30

Idd7 Conditions ......................................................................................................................................... 31

AC Timing Operating Specifications ................................................................................................................ 35

AC and DC Operating Conditions .................................................................................................................... 46

ODT DC Electrical Characteristics ................................................................................................................... 47

Input Electrical Characteristics and Operating Conditions ............................................................................... 48

Output Electrical Characteristics and Operating Conditions ............................................................................. 51

Output Driver Characteristics ......................................................................................................................... 53

Power and Ground Clamp Characteristics ....................................................................................................... 57

AC Overshoot/Undershoot Specification ......................................................................................................... 58

Input Slew Rate Derating ................................................................................................................................ 60

Commands .................................................................................................................................................... 74

Truth Tables ............................................................................................................................................... 74

DESELECT ................................................................................................................................................. 78

NO OPERATION (NOP) .............................................................................................................................. 79

LOAD MODE (LM) ..................................................................................................................................... 79

ACTIVATE .................................................................................................................................................. 79

READ ......................................................................................................................................................... 79

WRITE ....................................................................................................................................................... 79

PRECHARGE .............................................................................................................................................. 80

REFRESH ................................................................................................................................................... 80

SELF REFRESH ........................................................................................................................................... 80

Mode Register (MR) ........................................................................................................................................ 80

Burst Length .............................................................................................................................................. 81

Burst Type ................................................................................................................................................. 81

Operating Mode ......................................................................................................................................... 83

DLL RESET ................................................................................................................................................. 83

Write Recovery ........................................................................................................................................... 84

Power-Down Mode .................................................................................................................................... 84

CAS Latency (CL) ........................................................................................................................................ 85

Extended Mode Register (EMR) ....................................................................................................................... 86

DLL Enable/Disable ................................................................................................................................... 87

Output Drive Strength ................................................................................................................................ 87

DQS# Enable/Disable ................................................................................................................................. 87

RDQS Enable/Disable ................................................................................................................................. 87

Output Enable/Disable ............................................................................................................................... 87

On-Die Termination (ODT) ........................................................................................................................ 88

Contents

PDF: 09005aef82f1e6e2

Rev. M 9/08 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

512Mb: x4, x8, x16 DDR2 SDRAM

Off-Chip Driver (OCD) Impedance Calibration ............................................................................................ 88

Posted CAS Additive Latency (AL) ............................................................................................................... 88

Extended Mode Register 2 (EMR2) .................................................................................................................. 90

Extended Mode Register 3 (EMR3) .................................................................................................................. 91

Initialization .................................................................................................................................................. 92

ACTIVATE ...................................................................................................................................................... 96

READ ............................................................................................................................................................. 98

READ with Precharge ................................................................................................................................ 102

READ with Auto Precharge ......................................................................................................................... 104

WRITE .......................................................................................................................................................... 109

PRECHARGE ................................................................................................................................................. 119

REFRESH ...................................................................................................................................................... 120

SELF REFRESH .............................................................................................................................................. 121

Power-Down Mode ....................................................................................................................................... 123

Precharge Power-Down Clock Frequency Change .......................................................................................... 130

Reset ............................................................................................................................................................. 131

CKE Low Anytime ...................................................................................................................................... 131

ODT Timing .................................................................................................................................................. 133

MRS Command to ODT Update Delay ........................................................................................................ 135

PDF: 09005aef82f1e6e2

Rev. M 9/08 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

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