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RN1109MFV,L3F

Description
TRANS PREBIAS NPN 50V 500NA VESM
Categorysemiconductor    Discrete semiconductor   
File Size505KB,6 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
Download Datasheet Parametric View All

RN1109MFV,L3F Overview

TRANS PREBIAS NPN 50V 500NA VESM

RN1109MFV,L3F Parametric

Parameter NameAttribute value
Transistor typeNPN - Pre-biased
Current - Collector (Ic) (Maximum)100mA
Voltage - collector-emitter breakdown (maximum)50V
Resistor - Substrate (R1)47 kOhms
Resistor - Emitter Base (R2)22 kOhms
DC current gain (hFE) at different Ic, Vce (minimum value)70 @ 10mA,5V
Vce saturation value (maximum value) when different Ib,Ic300mV @ 500µA,5mA
Current - collector cutoff (maximum)500nA
Power - Max150mW
Installation typesurface mount
Package/casingSOT-723
Supplier device packagingVESM
RN1107MFV to RN1109MFV
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor)
RN1107MFV, RN1108MFV, RN1109MFV
0.22 ± 0.05
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Ultra-small package, suited to very high density mounting
0.8 ± 0.05
1.2 ± 0.05
Unit: mm
1.2 ± 0.05
Incorporating a bias resistor into the transistor reduces the number of parts,
so enabling the manufacture of ever more compact equipment and lowering
assembly cost.
A wide range of resistor values is available for use in various circuits.
Complementary to the RN2107MFV to RN2109MFV
1
0.4
1
3
2
0.13 ± 0.05
Equivalent Circuit and Bias Resistor Values
0.5 ± 0.05
Type No.
RN1107MFV
RN1108MFV
RN1109MFV
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
0.4
VESM
1. BASE
2. EMITTER
3. COLLECTOR
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
RN1107MFV
to RN1109MFV
RN1107MFV
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1107MFV
to
RN1109MFV
RN1108MFV
RN1109MFV
I
C
P
C
(Note 1)
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
50
50
6
7
15
100
150
150
−55
to 150
V
JEDEC
JEITA
TOSHIBA
2-1L1A
Weight: 1.5 mg (typ.)
Unit
V
V
mA
mW
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: Mounted on an FR4 board (25.4 mm
×
25.4 mm
×
1.6 mmt)
Pad Dimension(Reference)
0.5
0.45
Unit:mm
1.15
0.4
0.45
0.4
0.4
Start of commercial production
2005-02
1
2016-09-14
0.32 ± 0.05
0.80 ± 0.05

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