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VL-MM9-2EBN

Description
2GB PC3-12800 SODIMM DDR3L, ET
Categoryaccessories   
File Size225KB,13 Pages
ManufacturerVersaLogic Corp.
Websitehttps://www.versalogic.com/
Environmental Compliance
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VL-MM9-2EBN Overview

2GB PC3-12800 SODIMM DDR3L, ET

VL-MM9-2EBN Parametric

Parameter NameAttribute value
Accessory typememory module
Specification2GB(256Mx64)DDR3 SDRAM
Product Specifications
PART NO.:
VL47D5763A-K0SD-S1
REV: 1.0
General Information
2GB 256Mx64 DDR3 SDRAM LOW VOLTAGE NON-ECC UNBUFFERED SODIMM 204-PIN
Description
The VL47D5763A is a 256Mx64 DDR3 SDRAM high density SODIMM. This single rank memory module consists of
eight CMOS 256Mx8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages and a 2K EEPROM with
thermal sensor in an 8-pin MLF package. This module is a 204-pin small-outline dual in-line memory module and is
intended for mounting into an edge connector socket. Decoupling capacitors are mounted on the printed circuit board
for each DDR3 SDRAM.
Features
204-pin, small-outline dual in-line memory module (SODIMM)
Fast data transfer rate: PC3-12800
VDD = VDDQ = 1.35V (1.28V~1.45V) & 1.5V (1.425V~1.575V)
JEDEC standard 1.35V (1.28V~1.45V) & 1.5V (1.425V~1.575V)
VDDSPD = 3.0V to 3.6V
Eight internal component banks for concurrent operation
8-bit pre-fetch architecture
Bi-directional differential data-strobe
Nominal and dynamic on-die termination (ODT)
ZQ calibration support
Programmable CAS# latency: 11 (DDR3-1600)
Programmable burst; length (8)
Average refresh period 7.8 us
Asynchronous reset
Fly-by topology
On board terminated command, address, and control bus
Serial presence detect (SPD) EEPROM with thermal sensor
o
o
o
Thermal sensor range: -40 C to +125 C (Max +/-3 C accuracy)
Lead-free, RoHS compliant
Gold edge contacts
PCB: Height 30.00mm (1.181”), double sided component
o
o
Operating temperature (T
OPER
): -40 C to +95 C (module screening using
commercial DRAM)
Notes: Double refresh rate is required when 85 C < T
OPER
<= 95 C.
T
OPER
is DRAM case temperature (Tc).
o
o
Pin Description
Pin Name
A0~A14
A10/AP
A12/BC#
BA0~BA2
DQ0~DQ63
DQS0~DQS7
DQS0#~DQS7#
DM0~DM7
CK0,CK0#
ODT0
CKE0
CS0#
RAS#
CAS#
WE#
VDD
VSS
SA0~SA1
SDA
SCL
EVENT#
Function
Address Inputs
Address Input/ Autoprecharge
Address Input/ Burst Chop
Bank Address Inputs
Data Input/Output
Data Strobes
Data Strobes Complement
Data Masks
Clock Input
On-die Termination Control
Clock Enables
Chip Selects
Row Address Strobes
Column Address Strobes
Write Enable
Voltage Supply
Ground
SPD Address
SPD Data Input/Output
SPD Clock Input
Temperature Event Output
Reference Voltage for CA
Reference Voltage for DQ
SPD Voltage Supply
Termination Voltage
Register and SDRAM Control
No Connect
Order Information:
VL47D5763A - K0 S D - S1
OPERATING TEMPERATURE
S1:
Industrial screening
VREFCA
VREFDQ
VDDSPD
VTT
RESET#
NC
DRAM DIE
D-DIE
DRAM MANUFACTURER
S - SAMSUNG
MODULE SPEED
K0: PC3-12800 @ CL11
VL: Lead-free/RoHS
DRAM component: Samsung K4B2G0846D-HYK0
Tel 949.888.2444 – 30052 Tomas, Rancho Santa Margarita, CA 92688 USA –
www.virtium.com
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