EEWORLDEEWORLDEEWORLD

Part Number

Search

SFAF806G C0G

Description
DIODE GEN PURP 400V 8A ITO220AC
Categorysemiconductor    Discrete semiconductor   
File Size378KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

SFAF806G C0G Overview

DIODE GEN PURP 400V 8A ITO220AC

SFAF806G C0G Parametric

Parameter NameAttribute value
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)400V
Current - average rectification (Io)8A
Voltage at different If - Forward (Vf1.3V @ 8A
speedFast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr)35ns
Current at different Vr - Reverse leakage current10µA @ 400V
Capacitance at different Vr, F60pF @ 4V,1MHz
Installation typeThrough hole
Package/casingTO-220-2 whole package
Supplier device packagingITO-220AC
Operating Temperature - Junction-55°C ~ 150°C
SFAF801G - SFAF808G
Taiwan Semiconductor
CREAT BY ART
8A, 50V - 600V Isolated Glass Passivated Super Fast Rectifiers
FEATURES
- Glass passivated chip junction
- High efficiency, Low VF
- High surge current capability
- High current capability
- High reliability
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
1
2
ITO-220AC
MECHANICAL DATA
Case:
ITO-220AC
Molding compound, UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
As marked
Mounting torque:
0.56 Nm max.
Weight:
1.7 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
I
F
= 8 A
Maximum reverse current @ rated V
R
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Test conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and applied reverse voltage of 4.0V DC.
T
J
=25°C
T
J
=100°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
θJC
T
J
T
STG
90
4
- 55 to +150
- 55 to +150
0.95
10
400
35
60
SFAF
801G
50
35
50
SFAF
802G
100
70
100
SFAF
803G
150
105
150
SFAF
804G
200
140
200
8
125
1.3
1.7
SFAF
805G
300
210
300
SFAF
806G
400
280
400
SFAF
807G
500
350
500
SFAF
808G
600
420
600
UNIT
V
V
V
A
A
V
μA
ns
pF
°C/W
°C
°C
Version: J1511

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号