DMJ70H600SH3 datasheet, PDF - EEWORLD Datasheet

DMJ70H600SH3: DescriptionMOSFET BVDSS: 651V 800V TO251; Categorysemiconductor Discrete semiconductor; File Size390KB，7 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/

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MOSFET BVDSS: 651V 800V TO251

Parameter Name	Attribute value
FET type	N channel
technology	MOSFET (metal oxide)
Drain-source voltage (Vdss)	700V
Current - Continuous Drain (Id) at 25°C	11A（Tc）
Drive voltage (maximum Rds On, minimum Rds On)	10V
Rds On (maximum value) when different Id, Vgs	600 milliohms @ 2.4A, 10V
Vgs (th) (maximum value) when different Id	4V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)	18.2nC @ 10V
Vgs (maximum value)	±30V
Input capacitance (Ciss) at different Vds (maximum value)	643pF @ 25V
FET function	-
Power dissipation (maximum)	113W（Tc）
Operating temperature	-55°C ~ 150°C（TJ）
Installation type	Through hole
Supplier device packaging	TO-251
Package/casing	TO-251-3, IPak, short leads

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