AOT12N30/AOTF12N30
300V,11.5A N-Channel MOSFET
General Description
The AOT12N30/AOTF12N30 is fabricated using an
advanced high voltage MOSFET process that is designed
to deliver high levels of performance and robustness in
popular AC-DC applications.By providing low R
DS(on)
, C
iss
and C
rss
along with guaranteed avalanche capability this
parts can be adopted quickly into new and existing offline
power supply designs.These parts are ideal for boost
converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
Product Summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
350V@150℃
11.5A
< 0.42Ω
100% UIS Tested
100% R
g
Tested
For Halogen Free add "L" suffix to part number:
AOT12N30L/AOTF12N30L
Top View
TO-220
TO-220F
D
G
AOT12N30
D
S
AOTF12N30
G
D
G
S
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
AOT12N30
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
G
C
AOTF12N30
300
±30
11.5*
7.3*
29
3.8
430
5
Units
V
V
A
A
mJ
V/ns
W
W/
o
C
°C
°C
V
GS
T
C
=25°C
T
C
=100°C
I
D
I
DM
I
AS
E
AS
dv/dt
P
D
T
J
, T
STG
T
L
Symbol
R
θJA
R
θCS
R
θJC
AOT12N30
65
0.5
0.95
132
1
11.5
7.3
Single pulsed avalanche energy
Peak diode recovery dv/dt
T
C
=25°C
B
Power Dissipation
Derate above 25
o
C
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A,D
Maximum Case-to-sink
A
Maximum Junction-to-Case
36
0.3
-55 to 150
300
AOTF12N30
65
--
3.5
Units
°C/W
°C/W
°C/W
Rev 1: Nov 2011
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Page 1 of 6
AOT12N30/AOTF12N30
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
STATIC PARAMETERS
BV
DSS
BV
DSS
/∆TJ
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
g
FS
V
SD
I
S
I
SM
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Pulsed Current
500
V
GS
=0V, V
DS
=25V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
55
3
1.3
10
V
GS
=10V, V
DS
=240V, I
D
=12A
632
90
7
2.7
12.8
4.4
4.3
18
V
GS
=10V, V
DS
=150V, I
D
=12A,
R
G
=25Ω
I
F
=12A,dI/dt=100A/µs,V
DS
=100V
130
1
31
36
20
170
1.3
205
1.6
I
D
=250µA, V
GS
=0V, T
J
=25°C
I
D
=250µA, V
GS
=0V, T
J
=150°C
ID=250µA, V
GS
=0V
V
DS
=300V, V
GS
=0V
V
DS
=240V, T
J
=125°C
V
DS
=0V, V
GS
=±30V
V
DS
=5V I
D
=250µA
V
GS
=10V, I
D
=6A
V
DS
=40V, I
D
=6A
I
S
=1A,V
GS
=0V
3.4
4
0.31
11
0.74
1
11.5
29
790
125
11
4.1
16
300
350
0.29
1
10
±100
4.5
0.42
V
V/
o
C
µA
nΑ
V
Ω
S
V
A
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
µC
Parameter
Conditions
Min
Typ
Max
Units
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=12A,dI/dt=100A/µs,V
DS
=100V
A. The value of R
θJA
is measured with the device in a still air environment with T
A
=25°C.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C, Ratings are based on low frequency and duty cycles to keep initial
T
J
=25°C.
D. The R
θJA
is the sum of the thermal impedance from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µs
pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, I
AS
=3.8A, V
DD
=150V, R
G
=25Ω, Starting T
J
=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1: Nov 2011
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Page 2 of 6
AOT12N30/AOTF12N30
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
10V
16
6.5V
I
D
(A)
10
125°C
100
V
DS
=40V
-55°C
12
I
D
(A)
8
6V
1
25°C
0.1
0
2
4
6
8
10
V
GS
(Volts)
Figure 2: Transfer Characteristics
3
Normalized On-Resistance
2.5
2
1.5
1
0.5
0
-100
V
GS
=10V
I
D
=6A
4
V
GS
=5.5V
0
0
5
10
15
20
25
30
V
DS
(Volts)
Fig 1: On-Region Characteristics
1.5
1.2
R
DS(ON)
(Ω)
0.9
0.6
0.3
0.0
0
5
10
15
20
25
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.2
V
GS
=10V
-50
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+02
1.0E+01
BV
DSS
(Normalized)
1.1
40
1.0E+00
I
S
(A)
1
1.0E-01
1.0E-02
0.9
1.0E-03
0.8
-100
1.0E-04
-50
0
50
100
150
200
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
125°C
25°C
T
J
(°C)
Figure 5:Break Down vs. Junction Temperature
Rev 1: Nov 2011
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Page 3 of 6
AOT12N30/AOTF12N30
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
V
DS
=240V
I
D
=12A
Capacitance (pF)
10000
12
1000
C
iss
V
GS
(Volts)
9
100
C
oss
10
6
3
C
rss
0
0
4
8
12
16
20
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
100
100
1
0.1
1
10
100
V
DS
(Volts)
Figure 8: Capacitance Characteristics
10
I
D
(Amps)
R
DS(ON)
limited
10µs
10
I
D
(Amps)
10µs
R
DS(ON)
limited
100µs
1
100µs
1
1ms
DC
10ms
1ms
DC
10ms
1s
0.1
0.1
T
J(Max)
=150°C
T
C
=25°C
0.01
1
10
100
1000
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area for AOT12N30 (Note F)
12
0.01
1
T
J(Max)
=150°C
T
C
=25°C
10
100
1000
V
DS
(Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area for AOTF12N30 (Note F)
Current rating I
D
(A)
9
6
3
0
0
25
50
75
100
125
150
T
CASE
(°C)
Figure 11: Current De-rating (Note B)
Rev 1: Nov 2011
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Page 4 of 6
AOT12N30/AOTF12N30
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
Z
θJC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=0.95°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
0.01
Single Pulse
T
on
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance for AOT12N30 (Note F)
10
Z
θJC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=3.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
0.01
Single Pulse
T
on
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF12N30 (Note F)
Rev 1: Nov 2011
www.aosmd.com
Page 5 of 6
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