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ES2DTR

Description
DIODE GEN PURP 200V 2A SMA
Categorysemiconductor    Discrete semiconductor   
File Size322KB,4 Pages
ManufacturerSMC
Websitehttp://www.smc-diodes.com/
Environmental Compliance
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ES2DTR Overview

DIODE GEN PURP 200V 2A SMA

ES2DTR Parametric

Parameter NameAttribute value
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)200V
Current - average rectification (Io)2A
Voltage at different If - Forward (Vf950mV @ 2A
speedFast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr)35ns
Current at different Vr - Reverse leakage current5µA @ 200V
Capacitance at different Vr, F25pF @ 4V,1MHz
Installation typesurface mount
Package/casingDO-214AC,SMA
Supplier device packagingSMA(DO-214AC)
Operating Temperature - Junction-55°C ~ 150°C
Technical Data
Data Sheet N0160, Rev. D
ES2A-ES2J
ES2A-ES2J SURFACE
MOUNT SUPER FAST RECTIFIER
Features
Glass Passivated Die Construction
Ideally Suited for Automatic Assembly
Low Forward Overload Drop, High Efficiency
Low Power Loss
Super-Fast Recovery Time
Plastic Case Material has UL Flammability
Classification Rating 94V-O
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
SMA
Circuit Diagram
Mechanical Data
Case: Low Profile Molded Plastic
Terminals: Solder Plated, Solderable per MIL-STD-750,
Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
Weight: 0.06 grams(approx)
Maximum Ratings and Electrical Characteristics
@T
A
=25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current @T
L
= 110°C
Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
@I
F
= 2.0A, T
J
=25°C
T
A
= 25°C
T
A
= 100°C
Maximum DC reverse current
at rated DC blocking voltage
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
Io
I
FSM
V
F
I
R
C
J
Trr
R
θJL
T
J
,T
STG
0.95
5.0
500
25
35
20
-55 to +150
ES2A
ES2B ES2C ES2D ES2E
ES2G
ES2J
Units
50
34
100
70
150
105
200
140
2.0
50
300
210
400
280
600
420
V
A
A
1.25
1.7
V
µA
pF
ns
K/W
°C
Typical junction capacitance (Note 1)
Maximum Reverse Recovery Time (Note 2)
Typical thermal resistance (Note 3)
Operating junction and storage temperature
range
Note:
1. Measured at 1.0 MHZ and applied reverse voltage of 4.0 V
DC
2. Measured with I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
3. Mounted on P.C. Board with 8.0mm
2
lead area
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com

ES2DTR Related Products

ES2DTR ES2ETR ES2JTR ES2GTR
Description DIODE GEN PURP 200V 2A SMA DIODE GEN PURP 300V 2A SMA DIODE GEN PURP 600V 2A SMA DIODE GEN PURP 400V 2A SMA
Diode type standard standard standard standard
Voltage - DC Reverse (Vr) (Maximum) 200V 300V 600V 400V
Current - average rectification (Io) 2A 2A 2A 2A
Voltage at different If - Forward (Vf 950mV @ 2A 1.25V @ 2A 1.7V @ 2A 1.25V @ 2A
speed Fast recovery = < 500 ns, > 200mA (Io) Standard recovery >500ns, >200mA (Io) Fast recovery = < 500 ns, > 200mA (Io) Fast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr) 35ns 35ns 35ns 35ns
Current at different Vr - Reverse leakage current 5µA @ 200V 5µA @ 300V 5µA @ 600V 5µA @ 400V
Capacitance at different Vr, F 25pF @ 4V,1MHz 25pF @ 4V,1MHz 25pF @ 4V,1MHz 25pF @ 4V,1MHz
Installation type surface mount surface mount surface mount surface mount
Package/casing DO-214AC,SMA DO-214AC,SMA DO-214AC,SMA DO-214AC,SMA
Supplier device packaging SMA(DO-214AC) SMA SMA(DO-214AC) SMA(DO-214AC)
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

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