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NVMFS5C677NLWFT1G

Description
T6 60V S08FL SINGLE
Categorysemiconductor    Discrete semiconductor   
File Size127KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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NVMFS5C677NLWFT1G Overview

T6 60V S08FL SINGLE

NVMFS5C677NLWFT1G Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)60V
Current - Continuous Drain (Id) at 25°C11A(Ta),36A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)4.5V,10V
Rds On (maximum value) when different Id, Vgs15 milliohms @ 10A, 10V
Vgs (th) (maximum value) when different Id2V @ 25µA
Gate charge (Qg) at different Vgs (maximum value)9.7nC @ 10V
Vgs (maximum value)±20V
Input capacitance (Ciss) at different Vds (maximum value)620pF @ 25V
FET function-
Power dissipation (maximum)3.5W(Ta),37W(Tc)
Operating temperature-55°C ~ 175°C(TJ)
Installation typesurface mount
Supplier device packaging5-DFN(5x6)(8-SOFL)
Package/casing8-PowerTDFN, 5-lead

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NVMFS5C677NLWFT1G NVMFS5C677NLT1G
Description T6 60V S08FL SINGLE MOSFET T6 60V S08FL SINGLE

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