NVMFS5C677NLT1G datasheet, PDF

NVMFS5C677NLT1G: DescriptionMOSFET T6 60V S08FL SINGLE; Categorysemiconductor Discrete semiconductor; File Size127KB，6 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn; Environmental Compliance

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MOSFET T6 60V S08FL SINGLE

Parameter Name	Attribute value
Product Attribute	Attribute Value
Manufacturer	ON Semiconductor
Product Category	MOSFET
RoHS	Details
Technology	Si
Mounting Style	SMD/SMT
Package / Case	SO-8FL
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	36 A
Rds On - Drain-Source Resistance	15 mOhms
Vgs th - Gate-Source Threshold Voltage	1.2 V
Vgs - Gate-Source Voltage	20 V
Qg - Gate Charge	9.7 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C
Configuration	Single
Pd - Power Dissipation	37 W
Channel Mode	Enhancement
Packaging	Reel
Forward Transconductance - Min	27.5 S
Fall Time	6 ns
Rise Time	13 ns
Factory Pack Quantity	1500
Typical Turn-Off Delay Time	25 ns
Typical Turn-On Delay Time	7 ns

	NVMFS5C677NLT1G	NVMFS5C677NLWFT1G
Description	MOSFET T6 60V S08FL SINGLE	T6 60V S08FL SINGLE

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