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1H8

Description
1 A, 1000 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size35KB,2 Pages
ManufacturerFORMOSA
Websitehttp://www.formosams.com/
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1H8 Overview

1 A, 1000 V, SILICON, SIGNAL DIODE

1H1
1.0 AMP HIGH EFFICIENCY RECTIFIERS
THRU
1H8
VOLTAGE RANGE
50 to 1000 Volts
CURRENT
FEATURES
* Low forward voltage drop
* High current capability
* High reliability
* High surge current capability
* High speed switching
1.0 Ampere
R-1
.102(2.6)
.091(2.3)
DIA.
.787(20.0)
MIN.
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
* Lead: Axial leads, solderable per MIL-STD-202,
method 208 guranteed
* Polarity: Color band denotes cathode end
* Mounting position: Any
* Weight: 0.19 grams
.126(3.2)
.106(2.7)
.025(0.65)
.021(0.55)
DIA.
.787(20.0)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375"(9.5mm) Lead Length at Ta=25 C
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Instantaneous Forward Voltage at 1.0A
Maximum DC Reverse Current
Ta=25 C
at Rated DC Blocking Voltage
Ta=100 C
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range T
J
, T
STG
NOTES:
1H1
50
35
50
1H2
100
70
100
1H3
200
140
200
1H4
300
210
300
1.0
25
1.3
5.0
1H5
400
280
400
1H6
600
420
600
1H7
800
560
800
1H8 UNITS
1000
700
1000
V
V
V
A
A
V
mA
mA
nS
pF
C
1.0
1.85
150
50
20
-65 +150
70
1. Reverse Recovery Time test condition: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.

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1H8 1H1 1H2 1H4 1H3 1H5 1H6 1H7
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