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RS1ALHMQG

Description
DIODE GEN PURP 50V 800MA SUB SMA
Categorysemiconductor    Discrete semiconductor   
File Size357KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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RS1ALHMQG Overview

DIODE GEN PURP 50V 800MA SUB SMA

RS1ALHMQG Parametric

Parameter NameAttribute value
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)50V
Current - average rectification (Io)800mA
Voltage at different If - Forward (Vf1.3V @ 800mA
speedFast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr)150ns
Current at different Vr - Reverse leakage current5µA @ 50V
Capacitance at different Vr, F10pF @ 4V,1MHz
Installation typesurface mount
Package/casingDO-219AB
Supplier device packagingSub SMA
Operating Temperature - Junction-55°C ~ 150°C

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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