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MASMCG6.5AE3

Description
TVS DIODE 6.5V 11.2V DO215AB
CategoryDiscrete semiconductor    diode   
File Size440KB,7 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance
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MASMCG6.5AE3 Overview

TVS DIODE 6.5V 11.2V DO215AB

MASMCG6.5AE3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeDO-215AB
package instructionR-PDSO-G2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Maximum breakdown voltage7.98 V
Minimum breakdown voltage7.22 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-215AB
JESD-30 codeR-PDSO-G2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation1500 W
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
polarityUNIDIRECTIONAL
Maximum power dissipation1.56 W
Certification statusNot Qualified
GuidelineMIL-19500
Maximum repetitive peak reverse voltage6.5 V
surface mountYES
technologyAVALANCHE
Terminal surfaceMatte Tin (Sn) - annealed
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
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