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2SA949-Y(TE6,F,M)

Description
TRANS PNP 50MA 150V TO226-3
Categorysemiconductor    Discrete semiconductor   
File Size130KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
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2SA949-Y(TE6,F,M) Overview

TRANS PNP 50MA 150V TO226-3

2SA949-Y(TE6,F,M) Parametric

Parameter NameAttribute value
Transistor typePNP
Current - Collector (Ic) (Maximum)50mA
Voltage - collector-emitter breakdown (maximum)150V
Vce saturation value (maximum value) when different Ib,Ic800mV @ 1mA,10A
Current - collector cutoff (maximum)100nA(ICBO)
DC current gain (hFE) at different Ic, Vce (minimum value)70 @ 10mA,5V
Power - Max800mW
Frequency - Transition120MHz
Operating temperature150°C(TJ)
Installation typeThrough hole
Package/casingTO-226-3, TO-92-3 long body
Supplier device packagingTO-92MOD

2SA949-Y(TE6,F,M) Related Products

2SA949-Y(TE6,F,M) 2SA949-O(TE6,F,M) 2SA949-Y(JVC1,F,M) 2SA949-Y(T6JVC1,FM 2SA949-Y(T6ONK1,FM 2SA949-Y(T6SHRP,FM 2SA949-Y,F(J 2SA949-Y,ONK-1F(J 2SA949-Y,ONK-1F(M
Description TRANS PNP 50MA 150V TO226-3 TRANS PNP 50MA 150V TO226-3 TRANS PNP 50MA 150V TO226-3 TRANS PNP 50MA 150V TO226-3 TRANS PNP 50MA 150V TO226-3 TRANS PNP 50MA 150V TO226-3 TRANS PNP 50MA 150V TO226-3 TRANS PNP 50MA 150V TO226-3 TRANS PNP 50MA 150V TO226-3
Transistor type PNP PNP PNP PNP PNP PNP PNP PNP PNP
Current - Collector (Ic) (Maximum) 50mA 50mA 50mA 50mA 50mA 50mA 50mA 50mA 50mA
Voltage - collector-emitter breakdown (maximum) 150V 150V 150V 150V 150V 150V 150V 150V 150V
Vce saturation value (maximum value) when different Ib,Ic 800mV @ 1mA,10A 800mV @ 1mA,10A 800mV @ 1mA,10A 800mV @ 1mA,10A 800mV @ 1mA,10A 800mV @ 1mA,10A 800mV @ 1mA,10A 800mV @ 1mA,10A 800mV @ 1mA,10A
Current - collector cutoff (maximum) 100nA(ICBO) 100nA(ICBO) 100nA(ICBO) 100nA(ICBO) 100nA(ICBO) 100nA(ICBO) 100nA(ICBO) 100nA(ICBO) 100nA(ICBO)
DC current gain (hFE) at different Ic, Vce (minimum value) 70 @ 10mA,5V 70 @ 10mA,5V 70 @ 10mA,5V 70 @ 10mA,5V 70 @ 10mA,5V 70 @ 10mA,5V 70 @ 10mA,5V 70 @ 10mA,5V 70 @ 10mA,5V
Power - Max 800mW 800mW 800mW 800mW 800mW 800mW 800mW 800mW 800mW
Frequency - Transition 120MHz 120MHz 120MHz 120MHz 120MHz 120MHz 120MHz 120MHz 120MHz
Operating temperature 150°C(TJ) 150°C(TJ) 150°C(TJ) 150°C(TJ) 150°C(TJ) 150°C(TJ) 150°C(TJ) 150°C(TJ) 150°C(TJ)
Installation type Through hole Through hole Through hole Through hole Through hole Through hole Through hole Through hole Through hole
Package/casing TO-226-3, TO-92-3 long body TO-226-3, TO-92-3 long body TO-226-3, TO-92-3 long body TO-226-3, TO-92-3 long body TO-226-3, TO-92-3 long body TO-226-3, TO-92-3 long body TO-226-3, TO-92-3 long body TO-226-3, TO-92-3 long body TO-226-3, TO-92-3 long body
Supplier device packaging TO-92MOD TO-92MOD TO-92MOD TO-92MOD TO-92MOD TO-92MOD TO-92MOD TO-92MOD TO-92MOD
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