2SA949-O(TE6,F,M) datasheet, PDF

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2SA949-O(TE6,F,M): DescriptionTRANS PNP 50MA 150V TO226-3; Categorysemiconductor Discrete semiconductor; File Size130KB，4 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/; Environmental Compliance

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2SA949-O(TE6,F,M) Overview

TRANS PNP 50MA 150V TO226-3

2SA949-O(TE6,F,M) Parametric

Parameter Name	Attribute value
Transistor type	PNP
Current - Collector (Ic) (Maximum)	50mA
Voltage - collector-emitter breakdown (maximum)	150V
Vce saturation value (maximum value) when different Ib,Ic	800mV @ 1mA，10A
Current - collector cutoff (maximum)	100nA（ICBO）
DC current gain (hFE) at different Ic, Vce (minimum value)	70 @ 10mA，5V
Power - Max	800mW
Frequency - Transition	120MHz
Operating temperature	150°C（TJ）
Installation type	Through hole
Package/casing	TO-226-3, TO-92-3 long body
Supplier device packaging	TO-92MOD

2SA949-O(TE6,F,M) Related Products

	2SA949-O(TE6,F,M)	2SA949-Y(JVC1,F,M)	2SA949-Y(T6JVC1,FM	2SA949-Y(T6ONK1,FM	2SA949-Y(T6SHRP,FM	2SA949-Y(TE6,F,M)	2SA949-Y,F(J	2SA949-Y,ONK-1F(J	2SA949-Y,ONK-1F(M
Description	TRANS PNP 50MA 150V TO226-3	TRANS PNP 50MA 150V TO226-3	TRANS PNP 50MA 150V TO226-3	TRANS PNP 50MA 150V TO226-3	TRANS PNP 50MA 150V TO226-3	TRANS PNP 50MA 150V TO226-3	TRANS PNP 50MA 150V TO226-3	TRANS PNP 50MA 150V TO226-3	TRANS PNP 50MA 150V TO226-3
Transistor type	PNP	PNP	PNP	PNP	PNP	PNP	PNP	PNP	PNP
Current - Collector (Ic) (Maximum)	50mA	50mA	50mA	50mA	50mA	50mA	50mA	50mA	50mA
Voltage - collector-emitter breakdown (maximum)	150V	150V	150V	150V	150V	150V	150V	150V	150V
Vce saturation value (maximum value) when different Ib,Ic	800mV @ 1mA，10A	800mV @ 1mA，10A	800mV @ 1mA，10A	800mV @ 1mA，10A	800mV @ 1mA，10A	800mV @ 1mA，10A	800mV @ 1mA，10A	800mV @ 1mA，10A	800mV @ 1mA，10A
Current - collector cutoff (maximum)	100nA（ICBO）	100nA（ICBO）	100nA（ICBO）	100nA（ICBO）	100nA（ICBO）	100nA（ICBO）	100nA（ICBO）	100nA（ICBO）	100nA（ICBO）
DC current gain (hFE) at different Ic, Vce (minimum value)	70 @ 10mA，5V	70 @ 10mA，5V	70 @ 10mA，5V	70 @ 10mA，5V	70 @ 10mA，5V	70 @ 10mA，5V	70 @ 10mA，5V	70 @ 10mA，5V	70 @ 10mA，5V
Power - Max	800mW	800mW	800mW	800mW	800mW	800mW	800mW	800mW	800mW
Frequency - Transition	120MHz	120MHz	120MHz	120MHz	120MHz	120MHz	120MHz	120MHz	120MHz
Operating temperature	150°C（TJ）	150°C（TJ）	150°C（TJ）	150°C（TJ）	150°C（TJ）	150°C（TJ）	150°C（TJ）	150°C（TJ）	150°C（TJ）
Installation type	Through hole	Through hole	Through hole	Through hole	Through hole	Through hole	Through hole	Through hole	Through hole
Package/casing	TO-226-3, TO-92-3 long body	TO-226-3, TO-92-3 long body	TO-226-3, TO-92-3 long body	TO-226-3, TO-92-3 long body	TO-226-3, TO-92-3 long body	TO-226-3, TO-92-3 long body	TO-226-3, TO-92-3 long body	TO-226-3, TO-92-3 long body	TO-226-3, TO-92-3 long body
Supplier device packaging	TO-92MOD	TO-92MOD	TO-92MOD	TO-92MOD	TO-92MOD	TO-92MOD	TO-92MOD	TO-92MOD	TO-92MOD

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