Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(V
AK
= Rated V
DRM
or V
RRM
, Gate Open)
ON CHARACTERISTICS
Peak Forward On-State Voltage (Note 2)
(I
TM
= 50 A)
Gate Trigger Current (Continuous dc)
(V
D
= 12 V, R
L
= 100
W)
Gate Trigger Voltage (Continuous dc)
(V
D
= 12 V, R
L
= 100
W)
Holding Current
(V
D
=12 Vdc, Initiating Current = 200 mA, Gate Open)
Latching Current
(V
D
= 12 V, I
G
= 30 mA)
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off−State Voltage
(V
D
= 67% of Rated V
DRM
, Exponential Waveform, Gate Open, T
J
= 125°C)
Critical Rate of Rise of On−State Current
(I
PK
= 50 A, Pw = 30
msec,
diG/dt = 1 A/msec, Igt = 50 mA)
dv/dt
di/dt
100
−
250
−
−
50
V/ms
A/ms
V
TM
I
GT
V
GT
I
H
I
L
−
4.0
0.5
5.0
−
−
12
0.67
13
35
1.8
30
1.0
40
80
V
mA
V
mA
mA
T
J
= 25°C
T
J
= 125°C
I
DRM
I
RRM
mA
−
−
−
−
0.01
2.0
Symbol
Min
Typ
Max
Unit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Indicates Pulse Test: Pulse Width
≤
2.0 ms, Duty Cycle
≤
2%.
Voltage Current Characteristic of SCR
+ Current
Anode +
V
TM
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode −
I
RRM
at V
RRM
on state
I
H
+ Voltage
I
DRM
at V
DRM
Forward Blocking Region
(off state)
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2
MCR25DG, MCR25MG, MCR25NG
40
I GT, GATE TRIGGER CURRENT (mA)
VGT, GATE TRIGGER VOLTAGE (V)
35
30
25
20
15
10
5
0
−40 −25 −10
5
20 35 50 65 80 95 110 125
T
J
, JUNCTION TEMPERATURE (°C)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
−40 −25 −10
5
20 35 50 65 80 95 110 125
T
J
, JUNCTION TEMPERATURE (°C)
Figure 1. Typical Gate Trigger Current versus
Junction Temperature
Figure 2. Typical Gate Trigger Voltage versus
Junction Temperature
I T, INSTANTANEOUS ON-STATE CURRENT (A)
Typical @ 25°C
Maximum @ 125°C
10
Maximum @ 25°C
R(t) TRANSIENT THERMAL R (NORMALIZED)
100
1
Z
0.1
qJC(t)
+
R
qJC
@
R(t)
1
0.1
0.5
0.9
1.3
1.7
2.1
2.5
2.9
0.01
0.1
1
10
V
T
, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
Figure 3. Typical On−State Characteristics
100
t, TIME (ms)
1000
1@104
Figure 4. Transient Thermal Response
100
100
I H , HOLDING CURRENT (mA)
10
IL , LATCHING CURRENT (mA)
10
1
−40 −25 −10
5
20 35 50 65 80 95 110 125
T
J
, JUNCTION TEMPERATURE (°C)
1
−40 −25 −10
5 20 35 50 65 80 95 110 125
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5. Typical Holding Current versus
Junction Temperature
Figure 6. Typical Latching Current versus
Junction Temperature
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3
MCR25DG, MCR25MG, MCR25NG
130
P(AV), AVERAGE POWER DISSIPATION (WATTS)
32
28
24
a
60°
90°
180°
dc
TC , CASE TEMPERATURE (
°
C)
120
a
110
a
= Conduction
Angle
20
a
= Conduction
Angle
16
12
8
4
0
0
a
= 30°
100
dc
a
= 30°
0
60°
90°
180°
20
90
80
2
4
6
8
10 12 14 16
18
I
T(RMS)
, RMS ON−STATE CURRENT (AMPS)
4
6
8
10 12 14 16 18
I
T(AV)
, AVERAGE ON−STATE CURRENT (AMPS)
2
20
Figure 7. Typical RMS Current Derating
Figure 8. On State Power Dissipation
1200
Gate-Cathode Open,
(dv/dt does not depend on RGK)
STATIC dv/dt (V/us)
2500
Gate Cathode Open,
(dv/dt does not depend on RGK)
2000
1000
STATIC dv/dt (V/us)
800
85°C
600
100°C
110°C
400
T
J
= 125°C
1500
V
PK
= 275
1000
V
PK
= 400
V
PK
= 600
500
V
PK
= 800
0
200
0
200
300
400
500
600
700
800
80
85
90
V
PK
, Peak Voltage (Volts)
95
100
105
110
T
J
, Junction Temperature (°C )
115
120
125
Figure 9. Typical Exponential Static dv/dt
Versus Peak Voltage
300
280
260
240
220
200
TJ=125° C f=60 Hz
180
160
1
2
3
4
1 CYCLE
Figure 10. Typical Exponential Static dv/dt
Versus Junction Temperature
I TSM, SURGE CURRENT (AMPS)
5
6
7
NUMBER OF CYCLES
8
9
10
Figure 11. Maximum Non−Repetitive Surge Current
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4
MCR25DG, MCR25MG, MCR25NG
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.415
0.160
0.190
0.025
0.038
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.024
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
---
---
0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.53
4.07
4.83
0.64
0.96
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.61
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
---
---
2.04
−T−
B
4
SEATING
PLANE
F
T
S
C
Q
1 2 3
A
U
K
H
Z
L
V
G
D
N
R
J
STYLE 3:
PIN 1.
2.
3.
4.
CATHODE
ANODE
GATE
ANODE
ON Semiconductor and the
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