MOSFET 2N-CH 50V 2A 8-SOIC
Parameter Name | Attribute value |
FET type | 2 N-channel (dual) |
FET function | standard |
Drain-source voltage (Vdss) | 50V |
Current - Continuous Drain (Id) at 25°C | 2A |
Rds On (maximum value) when different Id, Vgs | 300 milliohms @ 1.5A, 10V |
Vgs (th) (maximum value) when different Id | 3V @ 250µA |
Gate charge (Qg) at different Vgs (maximum value) | 6.6nC @ 10V |
Input capacitance (Ciss) at different Vds (maximum value) | 120pF @ 25V |
Power - Max | 2W |
Installation type | surface mount |
Package/casing | 8-SOIC (0.154", 3.90mm wide) |
Supplier device packaging | 8-SO |