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IRF7102

Description
MOSFET 2N-CH 50V 2A 8-SOIC
Categorysemiconductor    Discrete semiconductor   
File Size346KB,6 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

IRF7102 Overview

MOSFET 2N-CH 50V 2A 8-SOIC

IRF7102 Parametric

Parameter NameAttribute value
FET type2 N-channel (dual)
FET functionstandard
Drain-source voltage (Vdss)50V
Current - Continuous Drain (Id) at 25°C2A
Rds On (maximum value) when different Id, Vgs300 milliohms @ 1.5A, 10V
Vgs (th) (maximum value) when different Id3V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)6.6nC @ 10V
Input capacitance (Ciss) at different Vds (maximum value)120pF @ 25V
Power - Max2W
Installation typesurface mount
Package/casing8-SOIC (0.154", 3.90mm wide)
Supplier device packaging8-SO

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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