TYN 682 ---> TYN 692
SCR
.
.
.
FEATURES
HIGH SURGE CAPABILITY
HIGH ON-STATE CURRENT
HIGH STABILITY AND RELIABILITY
DESCRIPTION
The TYN 682 ---> TYN 692 Family Silicon Control-
led Rectifiers are high performance glass passi-
vated chips technology.
This general purpose Family Silicon Controlled
Rectifiers is designed for power supply up to
400Hz on resistive or inductive load.
ABSOLUTE RATINGS
(limiting values)
Symbol
IT(RMS)
IT(AV)
ITSM
RMS on-state current
(180° conduction angle)
Average on-state current
(180° conduction angle, single phase circuit)
Non repetitive surge peak on-state current
( Tj initial = 25°C )
I2t value
Critical rate of rise of on-state current
Gate supply : IG = 100 mA diG/dt = 1 A/µs
Storage and operating junction temperature range
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
Parameter
682
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125
°C
50
683
100
685
200
TYN
688
400
690
600
692
800
V
Parameter
Tc = 105
°C
Tc = 105
°C
tp = 8.3 ms
tp = 10 ms
I2t
dI/dt
Tstg
Tj
Tl
tp = 10 ms
Value
20
13
260
250
310
100
- 40 to + 150
- 40 to + 125
260
A2s
A/µs
°C
°C
°C
Unit
A
A
A
K
A
G
TO220AB
(Plastic)
Symbol
Unit
March 1995
1/4
TYN 682 ---> TYN 692
THERMAL RESISTANCES
Symbol
Rth (j-a)
Junction to ambient
Parameter
Value
60
1.3
Unit
°C/W
°C/W
Rth (j-c) DC Junction to case for DC
GATE CHARACTERISTICS
(maximum values)
PG (AV) = 1W
PGM = 10W (tp = 20
µs)
IFGM = 4A (tp = 20
µs)
VRGM = 5 V.
ELECTRICAL CHARACTERISTICS
Symbol
IGT
VGT
VGD
tgt
VD=12V
VD=12V
(DC)
(DC)
Test Conditions
RL=33Ω
RL=33Ω
Tj=25°C
Tj=25°C
Tj= 125°C
Tj=25°C
MAX
MAX
MIN
TYP
Value
25
1.5
0.2
2
Unit
mA
V
V
µs
mA
mA
V
mA
VD=VDRM R L=3.3kΩ
VD=VDRM IG = 200mA
dIG/dt = 1.5A/µs
IG= 1.2 IGT
IT= 100mA
gate open
IL
IH
VTM
IDRM
IRRM
dV/dt
tq
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj= 125°C
Tj= 125°C
Tj= 125°C
TYP
MAX
MAX
MAX
70
40
1.4
0.01
2
ITM= 50A tp= 380µs
VDRM
VRRM
Rated
Rated
Linear slope up to VD =67%VDRM
gate open
VD=67%VDRM ITM= 50A VR= 25V
dVD /dt= 50V/µs
dITM/dt=30 A/µs
MIN
TYP
500
70
V/µs
µs
2/4
TYN 682 ---> TYN 692
Fig.1 :
Maximum average power dissipation versus
average on-state current.
Fig.2 :
Correlation between maximum average power
dissipation and maximum allowable temperatures (Tamb
and T case) for different thermal resistances heatsink +
contact.
Fig.3 :
Average
temperature.
on-state
current
versus
case
Fig.4 :
Relative variation of thermal impedance versus
pulse duration.
Zth/Rth
1
Zt h( j-c)
0.1
Zt h( j-a)
tp (s)
0.01
1E-3
1E-2
1E-1
1E +0
1 E +1
1E +2 5 E+2
Fig.5 :
Relative variation of gate trigger current versus
junction temperature.
Fig.6 :
Non repetitive surge peak on-state current
versus number of cycles.
3/4
TYN 682 ---> TYN 692
Fig.7 :
Non repetitive surge peak on-state current for a
sinusoidal pulse with width : t
≤
10 ms, and
corresponding value of I2t.
Fig.8 :
On-state characteristics (maximum values).
PACKAGE MECHANICAL DATA
TO220AB Plastic
REF.
A
H
G
I
J
D
B
F
P
O
L
C
M
= N=
A
B
C
D
F
G
H
I
J
L
M
N
O
P
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
10.00 10.40 0.393 0.409
15.20 15.90 0.598 0.625
13.00 14.00 0.511 0.551
6.20
6.60 0.244 0.259
3.50
4.20 0.137 0.165
2.65
2.95 0.104 0.116
4.40
4.60 0.173 0.181
3.75
3.85 0.147 0.151
1.23
1.32 0.048 0.051
0.49
0.70 0.019 0.027
2.40
2.72 0.094 0.107
4.80
5.40 0.188 0.212
1.14
1.70 0.044 0.066
0.61
0.88 0.024 0.034
Cooling method : C
Marking : type number
Weight : 2.3 g
Recommended torque value : 0.8 m.N.
Maximum torque value : 1 m.N.
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-T HOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
©
1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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