MOSFET 2N-CH 100V 5A 8DFN
Parameter Name | Attribute value |
FET type | 2 N-channel (dual) |
FET function | standard |
Drain-source voltage (Vdss) | 100V |
Current - Continuous Drain (Id) at 25°C | 5A |
Rds On (maximum value) when different Id, Vgs | 35 milliohms @ 5A, 10V |
Vgs (th) (maximum value) when different Id | 4V @ 250µA |
Gate charge (Qg) at different Vgs (maximum value) | 29nC @ 10V |
Input capacitance (Ciss) at different Vds (maximum value) | 1840pF @ 50V |
Power - Max | 1.7W |
Operating temperature | -55°C ~ 150°C(TJ) |
Installation type | surface mount |
Package/casing | 8-PowerSMD, flat leads |
Supplier device packaging | 8-DFN-EP(5x6) |