ALD111933SAL datasheet, PDF - EEWORLD Datasheet

ALD111933SAL: DescriptionMOSFET 2N-CH 10.6V 8SOIC; Categorysemiconductor Discrete semiconductor; File Size86KB，10 Pages; ManufacturerAdvanced Linear Devices Inc.; Environmental Compliance

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MOSFET 2N-CH 10.6V 8SOIC

Parameter Name	Attribute value
FET type	2 N-channel (dual) pairing
FET function	standard
Drain-source voltage (Vdss)	10.6V
Current - Continuous Drain (Id) at 25°C	-
Rds On (maximum value) when different Id, Vgs	500 ohms @ 5.9V
Vgs (th) (maximum value) when different Id	3.35V @ 1µA
Gate charge (Qg) at different Vgs (maximum value)	-
Input capacitance (Ciss) at different Vds (maximum value)	2.5pF @ 5V
Power - Max	500mW
Operating temperature	0°C ~ 70°C（TJ）
Installation type	surface mount
Package/casing	8-SOIC (0.154", 3.90mm wide)
Supplier device packaging	8-SOIC

	ALD111933SAL	ALD111933PAL	ALD111933MAL
Description	MOSFET 2N-CH 10.6V 8SOIC	MOSFET 2N-CH 10.6V 8DIP	MOSFET 2N-CH 10.6V 8MSOP
FET type	2 N-channel (dual) pairing	2 N-channel (dual) pairing	2 N-channel (dual) pairing
FET function	standard	standard	standard
Drain-source voltage (Vdss)	10.6V	10.6V	10.6V
Rds On (maximum value) when different Id, Vgs	500 ohms @ 5.9V	500 ohms @ 5.9V	500 ohms @ 5.9V
Vgs (th) (maximum value) when different Id	3.35V @ 1µA	3.35V @ 1µA	3.35V @ 1µA
Input capacitance (Ciss) at different Vds (maximum value)	2.5pF @ 5V	2.5pF @ 5V	2.5pF @ 5V
Power - Max	500mW	500mW	500mW
Operating temperature	0°C ~ 70°C（TJ）	0°C ~ 70°C（TJ）	0°C ~ 70°C（TJ）
Installation type	surface mount	Through hole	surface mount
Package/casing	8-SOIC (0.154", 3.90mm wide)	8-DIP（0.300"，7.62mm）	8-TSSOP, 8-MSOP (0.118", 3.00mm wide)
Supplier device packaging	8-SOIC	8-PDIP	8-MSOP

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