VVZ 70
VTO 70
VVZF 70
VTOF 70
Three Phase
Rectifier Bridge
Preliminary data
2
C
D
E
3
1
C
D
E
I
dAV
= 70 A
V
RRM
= 800-1600 V
A
2
3
1
A
V
RSM
V
DSM
V
800
1200
1400
1600
V
RRM
V
DRM
V
800
1200
1400
1600
Type
B
VVZ 70
VVZF 70
A
2
C
D
E
5
4
6
B
VTO 70
VTOF 70
3
1
C
D
E
5
4
6
2
3
1
B
xxx 70-08io7
xxx 70-12io7
xxx 70-14io7
xxx 70-16io7
xxx = type
A
B
Symbol
I
dAV
x
I
dAVM
x
I
FRMS
, I
TRMS
I
FSM
, I
TSM
Test Conditions
T
C
= 85°C, module
module
per leg
T
VJ
= 45°C;
V
R
= 0 V
T
VJ
= T
VJM
V
R
= 0 V
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Maximum Ratings
70
70
36
550
600
500
550
1520
1520
1250
1250
150
A
A
A
A
A
A
A
A
2
s
A
2
s
A
2
s
A
2
s
A/ms
Features
• Package with copper base plate
• Isolation voltage 3000 V~
• Planar passivated chips
• Low forward voltage drop
• ¼" fast-on power terminals
Applications
• Supplies for DC power equipment
• Input rectifiers for PWM inverter
• Battery DC power supplies
• Field supply for DC motors
Advantages
• Easy to mount with two screws
• Space and weight savings
• Improved temperature and power
cycling capability
• Small and light weight
I
2
t
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= T
VJM
V
R
= 0 V
(di/dt)
cr
T
VJ
= 125°C
repetitive, I
T
= 50 A
f = 50 Hz, t
P
= 200
ms
V
D
= 2/3 V
DRM
I
G
= 0.3 A,
non repetitive, I
T
= 1/2 • I
dAV
di
G
/dt = 0.3 A/ms
T
VJ
= T
VJM
; V
DR
= 2/3 V
DRM
R
GK
=
¥;
method 1 (linear voltage rise)
T
VJ
= T
VJM
I
T
= I
TAVM
t
p
= 30
ms
t
p
= 500
ms
t
p
= 10 ms
£
£
£
500
1000
10
10
5
1
0.5
A/ms
V/ms
V
W
W
W
W
°C
°C
°C
V~
V~
Nm
lb.in.
g
(dv/dt)
cr
V
RGM
P
GM
P
GAVM
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight
Dimensions in mm (1 mm = 0.0394")
-40...+125
125
-40...+125
50/60 Hz, RMS
I
ISOL
£
1 mA
Mounting torque
t = 1 min
t=1s
(M5)
(10-32 UNF)
2500
3000
5 ± 15 %
44 ± 15 %
50
Data according to IEC 60747 refer to a single diode/thyristor unless otherwise stated
x
for resistive load at bridge output. IXYS reserves the right to change limits, test conditions and
dimensions.
© 2000 IXYS All rights reserved
1-2
008
VVZ 70
VTO 70
Symbol
I
D
, I
R
V
T
V
T0
r
T
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
t
q
R
thJC
R
thJH
d
S
d
A
a
Test Conditions
T
VJ
= T
VJM
; V
R
= V
RRM
; V
D
= V
DRM
I
T
= 80 A; T
VJ
= 25°C
Characteristic Values
£
£
5
1.64
0.85
11
£
£
£
£
£
£
£
£
£
1.5
1.6
100
200
0.2
5
450
200
2
250
0.9
0.15
1.1
0.157
16.1
7.5
50
mA
V
V
mW
V
V
mA
mA
V
mA
mA
mA
ms
ms
K/W
K/W
K/W
K/W
mm
mm
m/s
2
VVZF 70
VTOF 70
For power-loss calculations only
V
D
= 6 V;
V
D
= 6 V;
T
VJ
= T
VJM
;
T
VJ
=
T
VJ
=
T
VJ
=
T
VJ
=
25°C
-40°C
25°C
-40°C
V
D
= 2/3 V
DRM
T
VJ
= 25°C; t
P
= 10
ms
I
G
= 0.45 A; di
G
/dt = 0.45 A/ms
T
VJ
= 25°C; V
D
= 6 V; R
GK
=
¥
T
VJ
= 25°C; V
D
= 1/2 V
DRM
I
G
= 0.45 A; di
G
/dt = 0.45 A/ms
T
VJ
= T
VJM
; I
T
= 20 A, t
P
= 200
ms;
di/dt = -10 A/ms typ.
V
R
= 100 V; dv/dt = 15 V/ms; V
D
= 2/3 V
DRM
per thyristor / Diode; DC
per module
per thyristor / Diode; DC
per module
Creeping distance on surface
Creepage distance in air
Max. allowable acceleration
© 2000 IXYS All rights reserved
2-2
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