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FCH041N65F-F085

Description
MOSFET N-CH 650V 76A TO247
Categorysemiconductor    Discrete semiconductor   
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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FCH041N65F-F085 Overview

MOSFET N-CH 650V 76A TO247

FCH041N65F-F085 Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)650V
Current - Continuous Drain (Id) at 25°C76A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)10V
Rds On (maximum value) when different Id, Vgs41 milliohms @ 38A, 10V
Vgs (th) (maximum value) when different Id5V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)304nC @ 10V
Vgs (maximum value)±20V
Input capacitance (Ciss) at different Vds (maximum value)13566pF @ 25V
FET function-
Power dissipation (maximum)595W(Tc)
Operating temperature-55°C ~ 150°C(TJ)
Installation typeThrough hole
Supplier device packagingTO-247
Package/casingTO-247-3

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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