DIODE 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor
Parameter Name | Attribute value |
Maker | NXP |
package instruction | O-LALF-W2 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Is Samacsys | N |
Minimum breakdown voltage | 114 V |
Shell connection | ISOLATED |
Maximum clamping voltage | 167 V |
Configuration | SINGLE |
Diode component materials | SILICON |
Diode type | TRANS VOLTAGE SUPPRESSOR DIODE |
JESD-30 code | O-LALF-W2 |
Maximum non-repetitive peak reverse power dissipation | 1000 W |
Number of components | 1 |
Number of terminals | 2 |
Maximum operating temperature | 175 °C |
Minimum operating temperature | -65 °C |
Package body material | GLASS |
Package shape | ROUND |
Package form | LONG FORM |
polarity | UNIDIRECTIONAL |
Maximum power dissipation | 1.75 W |
Certification status | Not Qualified |
Maximum reverse current | 10 µA |
surface mount | NO |
technology | AVALANCHE |
Terminal form | WIRE |
Terminal location | AXIAL |
Base Number Matches | 1 |